Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Tunable photo-galvanic effect on topological insulator surfaces via proximity interactions

Ultrasensitive Anisotropic Room-Temperature Terahertz Photodetector Based on an Intrinsic Magnetic Topological Insulator MnBi2Te4.

Nonlinear Photoresponse of Type-Ii Weyl Semimetals

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Topological Insulator Metamaterial with Giant Circular Photogalvanic Effect

Photogalvanic spectroscopy on MnBi2Te4 topological insulator thin films

Enhanced Photocharacteristics by Fermi Level Modulating in Sb2Te3/Bi2Se3 Topological Insulator p–n Junction

Photogalvanic effects in topological insulators

Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry

Magneto-optical effects of an artificially-layered ferromagnetic topological insulator with T$_C$ of 160 K

Control over topological insulator photocurrents with light polarization

Magneto-optical Effects of an Artificially Layered Ferromagnetic Topological Insulator with a TC of 160 K

Direct observation of a photoinduced topological phase transition in Bi-doped (Pb,Sn)Se

Reversible engineering of topological insulator surface state conductivity through optical excitation

Tunable Photoresponse in 2D WTe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunctions

Ultrasensitive and broadband polarization-sensitive topological insulator photodetector induced by element substitution

Photo-Seebeck effect in single-crystalline bismuth telluride topological insulator

Nonlinear photocurrent in quantum materials for broadband photodetection

Topological Insulators for High-Performance Terahertz to Infrared Applications

Giant topological longitudinal circular photo-galvanic effect in the chiral multifold semimetal CoSi

Giant Photoinduced Anomalous Hall Effect of the Topological Surface States in Three Dimensional Topological Insulators Bi2Te3