Quantum spin/valley Hall effect and topological insulator phase transitions in silicene

M. Tahir,A. Manchon,K. Sabeeh,U. Schwingenschlogl

DOI: https://doi.org/10.1063/1.4803084

2012-06-16

Abstract:We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to regulate the quantum spin Hall effect (QSHE) and the quantum valley Hall effect (QVHE) in silicene through an external electric field and the intrinsic spin - orbit interaction (SOI), so as to achieve the quantum phase transition from a two - dimensional topological insulator to a trivial insulator. Specifically, the paper explores the following points:

1. **Theoretical realization of the quantum spin Hall effect and the quantum valley Hall effect**:
- By combining the external electric field and the intrinsic spin - orbit interaction, the researchers have shown that the quantum spin Hall effect and the quantum valley Hall effect can be realized in silicene.

2. **Quantum phase transition and its accompanying phenomena**:
- When the external electric field and the spin - orbit interaction act together, a quantum phase transition occurs at the charge neutral point. This phase transition will lead to the disappearance of the quantum spin Hall effect and the appearance of the quantum valley Hall effect.
- This phase transition provides an experimentally tunable method to control the topological state of silicene.

3. **Comparison with graphene and other traditional topological insulators**:
- Unlike graphene, silicene has a large intrinsic spin - orbit interaction (about 1.55 meV), which makes these effects in silicene experimentally realizable and observable at a reasonable temperature.

4. **Possibility of experimental verification**:
- Research shows that by applying an external perpendicular electric field, the band gap and topological state of silicene can be controlled, thus providing the possibility for experimentally realizing the quantum spin Hall effect, the quantum valley Hall effect and topological insulators.

### Formula summary

The key formulas involved in the paper include:

- **Hamiltonian**:
\[
H_{\eta, s_z} = v (\sigma_x p_x - \eta \sigma_y p_y) - \eta s_z \Delta_{SO} \sigma_z + \Delta_z \sigma_z
\]
where $\eta=\pm$ represents the K and K' points, $\Delta_z = l E_z$ is the energy level shift caused by the external electric field, $(\sigma_x, \sigma_y, \sigma_z)$ are Pauli matrices, $v$ is the Fermi speed of Dirac fermions, and $s_z=\pm1$ represent spin - up and spin - down respectively.

- **Energy eigenvalue**:
\[
E_{n, s_z}^{\eta} = n \sqrt{(v \hbar k)^2+(\Delta_{SO}-\eta s_z \Delta_z)^2}
\]
where $n = \pm$ represents the electron and hole bands.

- **Hall conductivity**:
\[
\sigma_{xy}(\eta, s_z)=-\frac{s_z e^2 v^2}{4(2\pi)^2}\int d^2k\frac{\Delta_{SO}-\eta s_z \Delta_z}{[v^2 \hbar^2 k^2+(\Delta_{SO}-\eta s_z \Delta_z)^2]^{3/2}}[f(E_{+, s_z}^\eta)-f(E_{-, s_z}^\eta)]
\]

- **Spin and valley Hall conductivity**:
\[
\sigma_{xy}^{\text{Spin}}=-\frac{e^2}{2h}[\text{sgn}(\Delta_{SO}-\Delta_z)+\text{sgn}(\Delta_{SO}+\Delta_z)]
\]
\[
\sigma_{xy}^{\text{Valley}}=\frac{e^2}{2h}[\text{sgn}(\Delta_{SO}+\Delta_z)-\text{sgn}(\Delta_{SO}-\Delta_z)]
\]

These formulas describe silicene.