Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Nanoscale Plasmonic and Optical Modulators Based on Transparent Conducting Oxides

Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

Single-Nanoparticle Plasmonic Electro-Optic Modulator Based on Mos2 Monolayers

Nanoscale Engineering of Optical Nonlinearity Based on a Metal Nitride/Oxide Heterostructure.

Design and Fabrication of Indium Tin Oxide for High Performance Electro-Optic Modulators at the Communication Wavelength

Dynamic Photochemical and Optoelectronic Control of Photonic Fano Resonances via Monolayer MoS2 Trions.

Indium-Tin-Oxide for High-performance Electro-optic Modulation

Plasmonic resonances in nanostructured transparent conducting oxide films

Single-Nanowire Thermo-Optic Modulator Based on a Varshni Shift

Multi-component Transparent Conducting Oxides: Progress in Materials Modelling

Embedded Nanopattern for Selectively Suppressed Thermal Conductivity and Enhanced Transparency in a Transparent Conducting Oxide Film

High Performance Thin-film Lithium Niobate Modulator Applied ITO Composite Electrode with Modulation Efficiency of 1V*cm

All-optical modulation based on MoS 2 -Plasmonic nanoslit hybrid structures

Ultra-broadband spatial light modulation with dual-resonance coupled epsilon-near-zero materials

Perspective on integrated photonic devices using transparent conductive oxides: Challenges and opportunities

On-chip Plasmon-Induced Transparency Based on Plasmonic Coupled Nanocavities

Tuneability and optimum functionality of plasmonic transparent conducting oxide-Ag core-shell nanostructures

Efficient Electro-Optical Modulation Based on Indium Tin Oxide

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Optical-Field Driven Charge-Transfer Modulations near Composite Nanostructures

Metal-Optic Nanophotonic Modulators in Standard CMOS Technology