Abstract:Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.

Low Frequency Dielectric Loss of Metal/Insulator/Organic Semiconductor Junctions in Ambient Conditions

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Spatially resolved dielectric loss at the Si/SiO$_2$ interface

Electron-phonon and electron-electron interactions in organic field effect transistors

Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA

Contact Resistance in Ambipolar Organic Field-Effect Transistors Measured by Confocal Photoluminescence Electro-Modulation Microscopy

Quantitative analysis of electronic transport through weakly-coupled metal/organic interfaces

Electron-Ion Coupling Breaks Energy Symmetry in Organic Electrochemical Transistors

On the Working Mechanisms of Solid‐State Double‐Layer‐Dielectric‐Based Organic Field‐Effect Transistors and Their Implication for Sensors

Temperature-independent field-induced charge separation at doped organic/organic interfaces: Experimental modeling of electrical properties

De-Dimerization Effect And Persistent Current In Mesoscopic Organic Polymer Rings

Dipole Formation at Organic/Metal Interfaces with Pre-Deposited and Post-Deposited Metal

Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer

Dynamic Infrared Electro-optic Response of Soluble Organic Semiconductors in Thin Film Transistors

High-Field Magnetoresistance of Organic Semiconductors

Defect creation and Diffusion under electric fields from first-principles: the prototypical case of silicon dioxide

Origin of Mechanical and Dielectric Losses from Two-Level Systems in Amorphous Silicon

Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

Through thick and thin: tuning the threshold voltage in organic field-effect transistors

Gate Bias Stress in Pentacene Field-Effect-Transistors: Charge Trapping in the Dielectric or Semiconductor