Abstract:Nanocrystalline carbon films containing preferentially oriented graphene-based nanocrystals within an amorphous carbon matrix have attracted significant theoretical and experimental interest due to their favorable chemical and physical properties. At present, there are intense efforts to study the grain size and growth orientation of the graphene-based nanocrystals to achieve a controllable growth of nanocrystalline carbon films. However, despite the frequent use of plasma-assisted deposition techniques, the atomistic-scale mechanisms, including the effects of plasma density and energy on the nucleation process and growth orientation of the graphene-based nanocrystals, as well as associated dynamic processes involved in deposition processes, have not yet been thoroughly studied. In this paper, the plasma-assisted growth of nanocrystalline carbon thin films with preferentially oriented nanocrystals was systematically studied by hybrid molecular dynamics-Monte Carlo simulations using a recently developed force field, the charge-implicit ReaxFF. By combining the experimental data with the atomistic simulations, we reveal that plasma ion bombardments, in suitable ranges of energies and densities, allow the highest nucleation density in the nanocrystalline carbon films. Theoretically optimum windows of the plasma energy and density are first presented in the form of crystallization phase diagrams. Furthermore, to investigate the relationship between the growth orientation and the plasma ion energy, simulations of graphene irradiated with Ar ions from different incident angles were also performed. On the basis of the mechanism of "survival of the fittest", we proposed using the critical energy of generating the Stone-Thrower-Wales defects to design the growth orientation of graphite-like nanocrystals by controlling the plasma ion energy.

Molecular beam growth of graphene nanocrystals on dielectric substrates

Molecular beam growth of graphene on mica

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Graphene growth on h-BN by molecular beam epitaxy

Single- and Bi-Layer Graphene Grown on Sapphire by Molecular Beam Epitaxy

Catalyst-Free Growth of Nanographene Films on Various Substrates

Electron-beam assisted selective growth of graphenic carbon thin films on SiO2/Si and quartz substrates

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Near-equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates.

Chemical Vapor Deposition of Nanocrystalline Graphene Directly on Arbitrary High-Temperature Insulating Substrates.

Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

Direct chemical vapor deposition of graphene on dielectric surfaces.

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices.

Autonomously Controlled Homogenous Growth of Wafer‐Sized High‐Quality Graphene Via a Smart Janus Substrate

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Repeated Growth and Bubbling Transfer of Graphene with Millimetre-Size Single-Crystal Grains Using Platinum

Controlling the Nucleation and Growth Orientation of Nanocrystalline Carbon Films during Plasma-Assisted Deposition: A Reactive Molecular Dynamics/Monte Carlo Study

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Perfecting the Growth and Transfer of Large Single-Crystal CVD Graphene: A Platform Material for Optoelectronic Applications

Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays

Towards room-temperature single-layer graphene synthesis by C60 Supersonic Molecular Beam Epitaxy