Abstract:Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a separate theoretical description. In this work, we theoretically study the electrical control and coherence properties of silicon hole dots with different magnetic field orientations. We discuss possible experimental configurations to optimize the electric dipole spin resonance (EDSR) Rabi time, the phonon relaxation time, and the dephasing due to random telegraph noise. Our main findings are: (i) The in-plane $g$-factor is strongly influenced by the presence of the split-off band, as well as by any shear strain. The $g$-factor is a non-monotonic function of the top gate electric field, in agreement with recent experiments. This enables coherence sweet spots at specific values of the top gate field and specific magnetic field orientations. (ii) Even a small ellipticity (aspect ratios $\sim 1.2$) causes significant anisotropy in the in-plane $g$-factor, which can vary by $50\% - 100\%$ as the magnetic field is rotated in the plane. (iii) EDSR Rabi frequencies are comparable to Ge, and the ratio between the relaxation time and the EDSR Rabi time $\sim 10^5$. For an out-of-plane magnetic field the EDSR Rabi frequency is anisotropic with respect to the orientation of the driving electric field, varying by $\approx 20\%$ as the driving field is rotated in the plane. Our work aims to stimulate experiments by providing guidelines on optimizing configurations and geometries to achieve robust, fast and long-lived hole spin qubits in silicon.

Spin Orbit Mediated Manipulation of Heavy Hole Spin Qubit in Gated Semiconductor Nanodevices

All electrically controlled quantum gates for single heavy hole spin qubits

Ultrafast hole spin qubit with gate-tunable spin–orbit switch functionality

Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power

Circuit QED with Hole-Spin Qubits in Ge/Si Nanowire Quantum Dots

Progress of Gate-Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Scalable qubit architecture based on holes in quantum dot molecules

Quantum optical interface for gate-controlled spintronic devices

Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Quantum computing with acceptor spins in silicon

Ge hole spin qubit

Hole Flying Qubits in Quantum Dot Arrays

Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Hole spin in tunable Ge hut wire double quantum dot

A singlet-triplet hole-spin qubit in MOS silicon

Two-qubit logic with anisotropic exchange in a fin field-effect transistor

Electrical operation of hole spin qubits in planar MOS silicon quantum dots

Spin Manipulation in Semiconductor Quantum Dots Qubit

Hole spin driving by strain-induced spin-orbit interactions