Single-atom doped graphene for hydrogen evolution reactions
Jin-Ho Choi,Hui min Hu
DOI: https://doi.org/10.1088/2053-1583/acddf7
IF: 6.861
2023-06-14
2D Materials
Abstract:Atomic doping is a widely used technique to modify the electronic properties of two-dimensional materials for various applications. In this study, we investigate the catalytic properties of single-atom doped graphene as electrocatalysts for hydrogen evolution reactions (HER) using first-principles calculations. We consider several elements, including Al, Ga, In, Si, Ge, Sn, P, As, and Sb, which were interstitially doped into single and double C vacancies in graphene. Our density functional theory calculations show that all the considered doped graphene, except for As-doped graphene, can be highly active for HER, with hydrogen adsorption free energies (∆G H* ) close to the optimal value (∆G H* = 0), ranging from –0.19 to 0.11 eV. Specifically, ∆G H* of Al, Ga, In, and Ge are much closer to zero when doped in the single vacancy than in the double vacancy. In contrast, ∆G H* of Sb and Sn are much closer to zero in the double vacancy. Si and P have ∆G H* values close to the optimum in both vacancies. Interestingly, the vacancy numbers play a crucial role in forming orbital hybridizations, resulting in distinct electronic distributions for most dopants. As a result, a few doped graphenes show distinctive ferrimagnetic and ferromagnetic orders, which is also an important factor for determining the strength of H adsorption. These findings have important implications for designing graphene-based HER catalysis.
materials science, multidisciplinary