Effect of Ga Variation on the Bulk and Grain‐Boundary Properties of Cu(In,Ga)Se2 Absorbers in Thin‐Film Solar Cells and Their Impacts on Open‐Circuit Voltage Losses
Sinju Thomas,Wolfram Witte,Dimitrios Hariskos,Stefan Paetel,Chang‐Yun Song,Heiko Kempa,Matthias Maiberg,Nora El‐Ganainy,Daniel Abou‐Ras
DOI: https://doi.org/10.1002/pip.3843
2024-10-06
Progress in Photovoltaics Research and Applications
Abstract:The trend of increased Voc losses for solar cells with GGI > 0.5 in the CIGSe layers can be traced back to decreased bulk lifetime and to the enhanced grain boundary recombination, which is affected by both decreased average grain sizes and increased recombination velocities. Polycrystalline widegap Cu(In,Ga)Se2 (CIGSe) absorbers for top cells in photovoltaic tandem devices can be synthesized via [Ga]/([Ga] + [In]) (GGI) ratios of > 0.5. However, the power conversion efficiencies of such high‐GGI devices are smaller than those of the record cells with GGI 0.5, which can be attributed to low bulk lifetimes and enhanced recombination at GBs in CIGSe absorbers in this compositional range.
materials science, multidisciplinary,physics, applied,energy & fuels