Abstract:We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge has a non-invasive method to study polytypism in such nanowires.

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: How to study the crystal structure and its polytypism in InAs nanowires by Raman spectroscopy, especially the relative proportion between the zinc - blend (ZB) and wurtzite (WZ) phases and the interface strain. Specifically, the paper focuses on the following aspects: 1. **Determination of the relative WZ fraction**: - Research shows that the temperature - dependent behavior of optical phonon energy can be used to determine the relative WZ fraction in InAs nanowires. The authors estimate the proportion of the WZ and ZB phases by analyzing Raman spectral data at different temperatures, especially the frequency change of the TO mode. 2. **Characterization of the interface strain**: - The authors propose that the manifestation of the interface strain between the ZB and WZ phases in the length direction of the nanowire can be reflected by the change in phonon linewidth during temperature evolution. By analyzing the change in the linewidth of the LO mode with temperature, the existence and influence of these interface strains can be revealed. 3. **Development of a non - invasive method**: - Through the above research, the authors demonstrate that temperature - dependent Raman measurement, as a non - invasive method, can be used to study polytypism in nanowires. This method provides an alternative to transmission electron microscopy (TEM) and can obtain important information about the crystal structure without damaging the sample. ### Formula Explanation To further illustrate the problem, the paper involves some formulas and calculations of physical quantities. For example: - The temperature - dependent frequency change of the TO mode can be expressed by the following formula: \[ \frac{d\omega_{TO}}{dT} = a \cdot \left( \frac{d\omega_{TO}}{dT} \right)_{WZ} + (1 - a) \cdot \left( \frac{d\omega_{TO}}{dT} \right)_{ZB} \] where \(a\) and \(1 - a\) represent the fractions of the WZ and ZB phases respectively, and \(\left( \frac{d\omega_{TO}}{dT} \right)_{WZ}\) and \(\left( \frac{d\omega_{TO}}{dT} \right)_{ZB}\) are the rate of change of the TO mode frequency with temperature in the pure WZ and ZB phases respectively. - The change in the linewidth of the LO mode with temperature reflects the influence of the interface strain. For nanowires, the linewidth \(\Gamma_{LO}\) of the LO mode shows different behaviors with temperature, especially in the low - temperature region, and its change trend is different from that of the bulk material, which may be due to the contribution of the interface strain. Through these studies, the authors have successfully applied Raman spectroscopy to the crystal structure analysis of InAs nanowires and proposed new methods to quantify the influence of polytypism and interface strain.

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