Abstract:A number of past studies have focused on point and line defects in graphene epitaxially grown on SiC substrates. However, few studies have investigated closed-ring defects formed within grain boundary loops. The present study addresses this issue by applying low-temperature scanning tunneling microscopy/spectroscopy to investigate the atomic structures of closed-ring defects in graphene epitaxially grown on 4H-SiC, and to evaluate their effects on the electron state density. The results indicate that the orientations of the graphene lattice inside and outside of grain boundary loop structures are rotated uniformly by an angle of 30 degrees relative to each other, suggesting that closed-ring defects are highly ordered and are mainly composed of clusters of pentagon-heptagon carbon rings and highly ordered pentagon-heptagon chains. In addition, the spectroscopy results reveal for the first time that the density of electron states inside a closed-ring defect is strongly localized and position-dependent. Moreover, these closed-ring defects can eliminate intervalley scattering while maintaining intravalley scattering. These findings are not only helpful for contributing to a deeper understanding of the effects of closed-ring defects in graphene, but also present a potentially useful valley-filtering mechanism for charge carries that can be applied to the practical development of all-electric valley-based devices.

Graphing and Grafting Graphene: Classifying Finite Topological Defects

Defects in Graphene : A Topological Description

One-dimensional extended lines of divacancy defects in graphene

Grain Boundary Loops in Graphene

Topological design of graphene

Structure and electronic properties of closed-ring defects in epitaxial graphene

Wavefronts Dislocations Measure Topology in Graphene with Defects

Counterpropagating Topological Interface States in Graphene Patchwork Structures with Regular Arrays of Nanoholes

Line Defects Guided Molecular Patterning on Graphene

The role of defects and doping in 2D graphene sheets and 1D nanoribbons.

Defects Controlled Wrinkling and Topological Design in Graphene

Topological defects and nanoholes in graphene oxide/hexagonal boron nitride heterostructures: stress buildup and accumulation

Toughening Graphene With Topological Defects: A Perspective

Properties of Strained Structures and Topological Defects in Graphene

Defect-Dependent Corrugation in Graphene

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

First-Principles Study on Migration and Coalescence of Point Defects in Monolayer Graphene

Topological Phases, Local Magnetic Moments, and Spin Polarization Triggered by C558-Line Defects in Graphene

Defects in Graphene: Generation, Healing, and Their Effects on the Properties of Graphene: A Review

Defects in graphene-based heterostructures: topological and geometrical effects

Defects in two-dimensional materials: Topological and geometrical effects