Abstract:Even though previously reported CdTe/CdSe type-II core/shell QD sensitizers possess intrinsic superior optoelectronic properties (such as wide absorption range, fast charge separation, and slow charge recombination) in serving as light absorbers, the efficiency of the resultant solar cell is still limited by the relatively low photovoltage. To further enhance photovoltage and cell efficiency accordingly, ZnTe/CdSe type-II core/shell QDs with much larger conduction band (CB) offset in comparison with that of CdTe/CdSe (1.22 eV vs 0.27 eV) are adopted as sensitizers in the construction of quantum dot sensitized solar cells (QDSCs). The augment of band offset produces an increase of the charge accumulation across the QD/TiO2 interface under illumination and induces stronger dipole effects, therefore bringing forward an upward shift of the TiO2 CB edge after sensitization and resulting in enhancement of the photovoltage of the resultant cell devices. The variation of relative chemical capacitance, Cμ, between ZnTe/CdSe and reference CdTe/CdSe cells extracted from impedance spectroscopy (IS) characterization under dark and illumination conditions clearly demonstrates that, under light irradiation conditions, the sensitization of ZnTe/CdSe QDs upshifts the CB edge of TiO2 by the level of ∼ 50 mV related to that in the reference cell and results in the enhancement of V(oc) of the corresponding cell devices. In addition, charge extraction measurements have also confirmed the photovoltage enhancement in the ZnTe/CdSe cell related to reference CdTe/CdSe cell. Furthermore, transient grating (TG) measurements have revealed a faster electron injection rate for the ZnTe/CdSe-based QDSCs in comparison with the CdSe cells. The resultant ZnTe/CdSe QD-based QDSCs exhibit a champion power conversion efficiency of 7.17% and a certified efficiency of 6.82% under AM 1.5 G full one sun illumination, which is, as far as we know, one of the highest efficiencies for liquid-junction QDSCs.

Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Prediction of Photoelectric Properties, Especially Power Conversion Efficiency of Cells, of IQ1 and Derivative Dyes in High-Efficiency Dye-Sensitized Solar Cells

Optimizing Photoelectrochemical Properties of Tio2 by Chemical Codoping

Transition metals doped CuAlSe2 for promising intermediate band materials

Increasing the Efficiency of Photocatalytic Water Splitting Via Introducing Intermediate Bands.

Influence of Piezoelectric Fields on InGaN Based Intermediate Band Solar Cells

Intermediate-band solar cells employing quantum dots embedded in an energy fence barrier.

The Important Role of Optical Absorption in Determining the Efficiency of Intermediate Band Solar Cells and a Design Principle for Perovskite Doping.

Half-filled Intermediate Bands in Doped Inorganic Perovskites for Solar Cells.

Design of High-Performance Photovoltaic Materials Via Codoping of Cs2AgPdX5 (X = Cl, Br)

Optimization of growth conditions of type-II Zn(Cd)Te/ZnCdSe submonolayer quantum dot superlattices for intermediate band solar cells

A hybrid density functional design of intermediate band semiconductor for photovoltaic application based on group IV elements (Si, Ge, Sn, and Pb)-doped CdIn<sub>2</sub>S<sub>4</sub>

Integrated Ideal‐Bandgap Perovskite/Bulk‐Heterojunction Solar Cells with Efficiencies > 24%

Band Engineering in Core/Shell ZnTe/CdSe for Photovoltage and Efficiency Enhancement in Exciplex Quantum Dot Sensitized Solar Cells

PCDTBT8‐Doped PffBT4T‐2OD‐Based Ternary Solar Cells with Enhanced Open‐Circuit Voltage, Fill Factor, and Charge Separation Efficiency

Chemically tuned intermediate band states in atomically thin Cu x GeSe/SnS quantum material for photovoltaic applications

Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells

Increasing Quantum Efficiency of Polymer Solar Cells with Efficient Exciton Splitting and Long Carrier Lifetime by Molecular Doping at Heterojunctions

Boosting the efficiency of organic solar cells via dual non-fullerene acceptors