Electronic Structure of Disclinated Graphene in an Uniform Magnetic Field

J. Smotlacha,R. Pincak,M. Pudlak

DOI: https://doi.org/10.1140/epjb/e2011-20384-6

2011-05-25

Abstract:The electronic structure in the vicinity of the 1-heptagonal and 1-pentagonal defects in the carbon graphene plane is investigated. Using a continuum gauge field-theory model the local density of states around the Fermi energy is calculated for both cases. In this model, the disclination is represented by an SO(2) gauge vortex and corresponding metric follows from the elasticity properties of the graphene membrane. To enhance the interval of energies, a self-consistent perturbation scheme is used. The Landau states are investigated and compared with the predicted values.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the electronic structure near heptagonal and pentagonal defects in graphene, especially the changes in the local density of states (LDoS) and Landau states in a uniform magnetic field. Specifically:

1. **Research Background**:
- The geometric structure of carbon nanomaterials can lead to topological defects in the hexagonal lattice, such as pentagons (positive curvature) and heptagons (negative curvature).
- These defects have an important impact on the electronic properties of nanostructures and may be applied to nanodevices such as quantum wires, non - linear electronic components, and transistors.

2. **Research Objectives**:
- Use the continuous gauge field theory model to calculate the local density of states (LDoS) near heptagonal and pentagonal defects, especially near the Fermi level.
- Study the influence of these defects in a uniform magnetic field and compare with previous research results.
- Explore the influence of different geometric structures (such as hyperboloids) on Landau states.

3. **Main Problems**:
- How to describe and quantify the influence of heptagonal and pentagonal defects on the electronic structure of graphene?
- After introducing a uniform magnetic field, how do these defects change the local density of states and Landau states?
- What are the specific effects of different types of curvature (positive curvature and negative curvature) on electronic properties?

Through the study of these problems, the author hopes to reveal the electronic behavior of topological defects in graphene under the action of an external magnetic field, and provide theoretical support for further understanding the physical properties of carbon nanomaterials and their potential applications.

### Key Formulas

- **Dirac Equation**:
\[
i\gamma^\alpha e_\alpha^\mu \left( \nabla_\mu - ia_\mu - iA_\mu \right) \psi = E \psi
\]
where $\psi$ is a bispinor wave function, and $a_\mu$ and $A_\mu$ are the gauge field and vector potential respectively.

- **Metric Tensor**:
\[
g_{\mu\nu} = \partial_\mu \vec{R} \cdot \partial_\nu \vec{R}
\]

- **Gaussian Curvature**:
\[
K = \frac{(\partial_{xx} f)(\partial_{yy} f) - (\partial_{xy} f)^2}{(1 + (\partial_x f)^2 + (\partial_y f)^2)^2}
\]

- **Landau State Energy**:
\[
E_n = \pm \sqrt{2Bn}, \quad n = 0, 1, 2, \ldots
\]
\[
E_n = \pm \sqrt{2B \sqrt{n - \nu + 1}}, \quad n = 0, 1, 2, \ldots
\]

These formulas help the author describe the electronic structure of defects in graphene and their behavior in an applied magnetic field.