Abstract:As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve switching energy & delay at reduced dimensions, allow improved interconnects and provide a complete logic/memory family. However, a viable beyond-CMOS logic technology has remained elusive. Here, we propose a scalable spintronic logic device which operates via spin-orbit transduction combined with magneto-electric switching. The proposed Magneto-Electric Spin Orbit (MESO) logic enables a new paradigm to continue scaling of logic performance to near thermodynamic limits for GHz logic (100 kT switching energy at 100 ps delay). The proposed MESO devices scale strongly and favorably with critical dimensions of the device, showing a cubic dependence of switching energy on size, (E_m proportional to W^3), and square dependence on voltage (E_m proportional to V^2). The excellent scaling is obtained thanks to the properties of the spin orbit effects (e.g. Inverse Spin Hall Effect (ISHE) and Inverse Rashba-Edelstein Effect (IREE)) and the dependence of capacitance on size. The operating voltages for these devices are predicted to be < 100 mV allowing a significant jump ahead of historic trends of scaling voltage with size and corresponding reduction of energy. Interconnect resistance is a critical obstacle for scaling beyond 10 nm dimensions. We project a less detrimental impact of interconnect resistance and show that MESO logic is amenable for highly resistive interconnects (100 <a class="link-external link-http" href="http://uOhm.cm" rel="external noopener nofollow">this http URL</a>-1 <a class="link-external link-http" href="http://mOhm.cm" rel="external noopener nofollow">this http URL</a>) which opens a possibility to use nano-metallic (width < bulk electron mean free path) or doped semiconducting wires (width<5 nm). A scalable, CMOS compatible, non-volatile logic family proposed here may enable the next multi-generational scaling of computing devices.

Scalability of spin FPGA: A Reconfigurable Architecture based on spin MOSFET

Scalable RFCMOS Model for 90 Nm Technology

Material Targets for Scaling All Spin Logic

A Multiplexer-Based High-Capacity Spintronic Synapse

Fabrication and characterization of pseudo-spin-MOSFET

Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor

Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic

Scalable energy-efficient magnetoelectric spin–orbit logic

Spin-Orbit Torque Neuromorphic Fabrics for Low-Leakage Reconfigurable In-Memory Computation

CMOS-compatible ising machines built using bistable latches coupled through ferroelectric transistor arrays

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Spin-dependent transport and current modulation in a current-in-plane field-effect transistor

FlexSpin: A CMOS Ising Machine With 256 Flexible Spin Processing Elements With 8-b Coefficients for Solving Combinatorial Optimization Problems

Electron and spin transport in semiconductor and magnetoresistive devices

Compact spin qubits using the common gate structure of fin field-effect transistors

Multifunctional spintronic transistors: Sub-60 mV/dec switching, non-local GMR, and NDR in spin gapless semiconductor and/or spin gapped metal FETs

Spin-NeuroMem: A Low-Power Neuromorphic Associative Memory Design Based on Spintronic Devices

Robust Micromagnet Design for Fast Electrical Manipulations of Single Spins in Quantum Dots

Nonvolatile SRAM architecture using MOSFET-based spin-transistors

Perspectives and Challenges of Scaled Boolean Spintronic Circuits Based on Magnetic Tunnel Junction Transducers

Evaluating Spintronic Devices Using the Modular Approach