Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

Epitaxial Synthesis of Graphene on 4H-Sic by Microwave Plasma Chemical Vapor Deposition

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide langmuir-blodgett films on silicon substrate

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

In situ atomic-scale observation of monolayer graphene growth from SiC

Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

Single- and Bi-Layer Graphene Grown on Sapphire by Molecular Beam Epitaxy

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Graphene Grown on Sapphire Surface by Using SiC Buffer Layer with SSMBE

Growth of few-layer graphene on sapphire substrates by directly depositing carbon atoms

3D arrangement of epitaxial graphene conformally grown on porousified crystalline SiC

p-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Graphene Films Grown on Sapphire Substrates Via Solid Source Molecular Beam Epitaxy

Multilayer graphene growth by a metal-catalyzed crystallization of diamond-like carbon

Chemical Vapor Deposition of Graphene on Self-Limited SiC Interfacial Layers Formed on Silicon Substrates for Heterojunction Devices

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties

Growth of Β-Sic Film by Pyrolysis of Polyimide Langmuir–Blodgett Films on Silicon