2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

Wen Yang,Kaiyao Xin,Juehan Yang,Qun Xu,Chongxin Shan,Zhongming Wei

DOI: https://doi.org/10.1002/smtd.202101348

IF: 12.4

2022-03-11

Small Methods

Abstract:Small Methods, EarlyView.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology

What problem does this paper attempt to address?

Bandgap engineering of two-dimensional semiconductor materials

A. Chaves,J. G. Azadani,Hussain Alsalman,D. R. da Costa,R. Frisenda,A. J. Chaves,Seung Hyun Song,Y. D. Kim,Daowei He,Jiadong Zhou,A. Castellanos-Gomez,F. M. Peeters,Zheng Liu,C. L. Hinkle,Sang-Hyun Oh,Peide D. Ye,Steven J. Koester,Young Hee Lee,Ph. Avouris,Xinran Wang,Tony Low

DOI: https://doi.org/10.1038/s41699-020-00162-4

IF: 10.516

2020-08-24

npj 2D Materials and Applications

Abstract:Abstract Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao,S. Chowdhury,M. A. Hollis,D. Jena,N. M. Johnson,K. A. Jones,R. J. Kaplar,S. Rajan,C. G. Van de Walle,E. Bellotti,C. L. Chua,R. Collazo,M. E. Coltrin,J. A. Cooper,K. R. Evans,S. Graham,T. A. Grotjohn,E. R. Heller,M. Higashiwaki,M. S. Islam,P. W. Juodawlkis,M. A. Khan,A. D. Koehler,J. H. Leach,U. K. Mishra,R. J. Nemanich,R. C. N. Pilawa‐Podgurski,J. B. Shealy,Z. Sitar,M. J. Tadjer,A. F. Witulski,M. Wraback,J. A. Simmons

DOI: https://doi.org/10.1002/aelm.201600501

IF: 6.2

2017-12-04

Advanced Electronic Materials

Abstract:Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower‐bandgap cousins in high‐power and RF electronics, as well as in deep‐UV optoelectronics, quantum information, and extreme‐environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed. Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices and applications. This article surveys and presents an enumerated list of the materials, physics, device and associated application research opportunities and challenges important for advancing the state of their science and technology.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Toward Sustainable Ultrawide Bandgap van der Waals Materials: An ab initio Screening Effort (Adv. Funct. Mater. 11/2024)

Chuin Wei Tan,Linqiang Xu,Chen Chen Er,Siang‐Piao Chai,Boris Kozinsky,Hui Ying Yang,Shengyuan A. Yang,Jing Lu,Yee Sin Ang

DOI: https://doi.org/10.1002/adfm.202470063

IF: 19

2024-03-13

Advanced Functional Materials

Abstract:Sustainable Materials In article 2308679, Yee Sin Ang and co‐workers propose a sustainability‐guided search criteria in the computational screening of ultrawide bandgap 2D layered semiconductors for dielectric, power electronics, and ultraviolet photonics device applications. The computational framework established in this work presents new opportunities for reinventing a more sustainable electronics landscape beyond the silicon era.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Recent Progress of Heterostructures Based on Two Dimensional Materials and Wide Bandgap Semiconductors

Ying Liu,Yanjun Fang,Deren Yang,Xiaodong Pi,Peijian Wang

DOI: https://doi.org/10.48550/arXiv.2203.03895

2022-03-08

Applied Physics

Abstract:Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime, the wide bandgap semiconductors (WBS) with an elevated breakdown voltage, high mobility, and high thermal conductivity have shown important applications in high-frequency microwave devices, high-temperature and high-power electronic devices. Beyond the study on single 2D materials or WBS materials, the multi-functional 2D/WBS heterostructures can promote the carrier transport at the interface, potentially providing novel physical phenomena and applications, and improving the performance of electronic and optoelectronic devices. In this review, we overview the advantages of the heterostructures of 2D materials and WBS materials, and introduce the construction methods of 2D/WBS heterostructures. Then, we present the diversity and recent progress in the applications of 2D/WBS heterostructures, including photodetectors, photocatalysis, sensors, and energy related devices. Finally, we put forward the current challenges of 2D/WBS heterostructures and propose the promising research directions in the future.
Wide Band Gap Semiconductor Optoelectronic Materials and Their Applications

Ye Zhizhen,Wang Fengzhi,Chen Fang,Lu Yangdan

DOI: https://doi.org/10.3788/AOS202242.1716001

2022-01-01

Acta Optica Sinica

Abstract:Wide band gap semiconductors have the characteristics of unique electronic structure, rich micro/nano structure, low temperature controllable preparation, flexible transparency, good chemical stability, abundant and inexpensive, etc. , which make it become a new important basic material of information technology and environmental technology. Taking zinc oxide and perovskite as two wide hand gap semiconductor materials, the preparation principle and method, photoelectric properties, and applications in the fields of ultraviolet light sources, transparent conductive thin films, and light-emitting diodes of the two materials are summarized. Finally, the prospect of its development is given.
Band Structure Engineering in 2D Materials for Optoelectronic Applications

Xiaozhi Bao,Qingdong Ou,Zai‐Quan Xu,Yupeng Zhang,Qiaoliang Bao,Han Zhang

DOI: https://doi.org/10.1002/admt.201800072

IF: 6.8

2018-09-27

Advanced Materials Technologies

Abstract:Recent advances in the development of 2D‐layered materials have witnessed the use of these materials as intriguing building blocks for various optoelectronic applications. The versatility of 2D material systems makes them particularly attractive for photodetection with fast response and high sensitivity over a broad spectral coverage, ranging from ultraviolet, visible to infrared. However, due to the atomically thin nature and inherent electronic structure, light that is harvested by monolayer 2D materials is extremely low and the photodetector devices often operate as Schottky junctions, which significantly limit the efficiency for photocurrent generation. Here, recent progress on the exploration of 2D material–based heterostructures and the engineering of the band structures for energy‐efficient optoelectronic applications is reviewed. First, the strategies to introduce a bandgap in graphene are reviewed and discussed. This is followed by a discussion on the engineering of electronic structures in 2D transition metal dichalcogenides by localized chemical doping, dual gating, liquid gating, thickness modulation, and constructing heterojunctions. It is concluded by a summary and perspective on the challenges and future directions. Recent progress on band structure engineering in 2D materials is reviewed, with a focus on improving suitability for optoelectronic applications. The efforts to open a bandgap in graphene by structuring it into nanoribbon and nanomesh are summarized. The engineering of electronic structures in 2D materials by localized doping, dual gating, liquid gating, thickness modulation, and heterostructuring is then discussed in detail.

materials science, multidisciplinary
Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Jueli Shi,Jiaye Zhang,Lu Yang,Mei Qu,Dong‐Chen Qi,Kelvin H. L. Zhang

DOI: https://doi.org/10.1002/adma.202006230

IF: 29.4

2021-04-01

Advanced Materials

Abstract:Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and high-performing thin film transistor (TFT) devices in the context of fundamental understanding is presented. In particular, an in depth overview is first provided on current understanding of the electronic structures, defect and doping chemistry, optical and transport properties of oxide semiconductors, which provide essential guiding principles for new material design and device optimization. With these principles, recent advances in design of p-type oxide semiconductors, new approaches for achieving cost-effective transparent (flexible) electrodes, and the creation of high mobility 2D electron gas (2DEG) at oxide surfaces and interfaces with a wealth of fascinating physical properties of great potential for novel device design are then reviewed. Finally, recent progress and perspective of oxide TFT based on new oxide semiconductors, 2DEG, and low-temperature solution processed oxide semiconductor for flexible electronics will be reviewed.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives

Soo Ho Choi,Yongsung Kim,Il Jeon,Hyunseok Kim

DOI: https://doi.org/10.1002/adma.202411108

IF: 29.4

2024-10-21

Advanced Materials

Abstract:The heterogeneous integration of wide‐bandgap semiconductors (WBGs) and 2D materials is emerging as a promising way to address various challenges faced by WBGs. This review covers recent advancements in fabrication techniques, mechanisms, devices, and novel functionalities of WBG/2D heterostructures. Furthermore, the directions and perspectives are outlined for realizing practical applications in the near future. Wide‐bandgap semiconductors (WBGs) are crucial building blocks of many modern electronic devices. However, there is significant room for improving the crystal quality, available choice of materials/heterostructures, scalability, and cost‐effectiveness of WBGs. In this regard, utilizing layered 2D materials in conjunction with WBG is emerging as a promising solution. This review presents recent advancements in the integration of WBGs and 2D materials, including fabrication techniques, mechanisms, devices, and novel functionalities. The properties of various WBGs and 2D materials, their integration techniques including epitaxial and nonepitaxial growth methods as well as transfer techniques, along with their advantages and challenges, are discussed. Additionally, devices and applications based on the WBG/2D heterostructures are introduced. Distinctive advantages of merging 2D materials with WBGs are described in detail, along with perspectives on strategies to overcome current challenges and unlock the unexplored potential of WBG/2D heterostructures.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Perspectives of 2D Materials for Optoelectronic Integration

Junru An,Xingyu Zhao,Yanan Zhang,Mingxiu Liu,Jian Yuan,Xiaojuan Sun,Zhiyu Zhang,Bin Wang,Shaojuan Li,Dabing Li

DOI: https://doi.org/10.1002/adfm.202110119

IF: 19

2021-12-08

Advanced Functional Materials

Abstract:Abstract 2D materials show wide‐ranging physical properties with their electronic bandgaps varying from zero to several electronvolts, offering a rich platform to explore novel electronic and optoelectronic functions. Notably, atomically thin 2D materials are well suited for integration in optoelectronic circuits, because of their ultrathin body, strong light–matter interactions, and compatibility with the current silicon photonic technology. In this paper, an overview of the state of the art of using 2D materials in optoelectronic devices and integration is provided. The optoelectronic properties of 2D materials and their typical electronic and optoelectronic applications including light sources, optical modulators, photodetectors, field‐effect transistors, and logic circuits are summarized. The device configurations, operation mechanisms, and device figures‐of‐merit are introduced and discussed. By discussing the recent advances, future trends, and existing challenges of 2D materials and their optoelectronic devices, this review has provided an insight into the perspectives of 2D materials for optoelectronic integration and may guide the development of this field within the research community.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications

Xingxia Sun,Chenguang Zhu,Xiaoli Zhu,Jiali Yi,Yong Liu,Dong Li,Anlian Pan

DOI: https://doi.org/10.1002/aelm.202001174

IF: 6.2

2021-03-15

Advanced Electronic Materials

Abstract:<p>Dynamically engineering the band alignment between materials, especially 2D semiconductors, is critically important for the design of novel devices with superior functions. Here, a review of band alignment engineering in 2D heterostructures and the derived device applications, mainly outlining their potential as photodetectors, photovoltaics, and light‐emitting devices, is provided. Various approaches are summarized, through exploiting the advantages of each component and different device structure, to further improve the performances of the optoelectronic devices. The authors also provide their perspectives on future developments of photoelectric chips based on the newly designed optoelectronic devices.</p>

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
2D Semiconductors for Specific Electronic Applications: from Device to System

Xiaohe Huang,Chunsen Liu,Peng Zhou

DOI: https://doi.org/10.1038/s41699-022-00327-3

IF: 10.516

2022-01-01

npj 2D Materials and Applications

Abstract:The shrinking of transistors has hit a wall of material degradation and the specialized electronic applications for complex scenarios have raised challenges in heterostructures integration. Intriguingly, two-dimensional (2D) materials have excellent performance even at monolayer. The rich band structures and the lattice-mismatch-free heterostructures can further develop specific mechanisms to meet the demands of various electronic systems. Here we review the progress of 2D semiconductors to develop specific electronic applications from devices to systems. Focusing on the ultra-thin high-performance nanosheets for transistor channels, we consider channel optimization, contact characteristics, dielectric integration. Then we examined 2D semiconductors for specific electronic functions including computing, memory and sense. Finally, we discuss the specific applications of functionalized arrays aiming at problems that are difficult to solve with bulk materials, like the fusion of memory and computation and the all-in-one system.
Band Alignment Engineering in Two-Dimensional Lateral Heterostructures

Biyuan Zheng,Chao Ma,Dong Li,Jianyue Lan,Zhe Zhang,Xingxia Sun,Weihao Zheng,Tiefeng Yang,Chenguang Zhu,Gang Ouyang,Gengzhao Xu,Xiaoli Zhu,Xiao Wang,Anlian Pan

DOI: https://doi.org/10.1021/jacs.8b07401

IF: 15

2018-01-01

Journal of the American Chemical Society

Abstract:Two-dimensional (2D) heterostructures have aroused widespread attentions due to the fascinating properties originating from the interfaces and the derived potential applications in modern electronics and optoelectronics. The interfacial band alignment engineering of 2D heterostructures would open up promising routes toward the flexible design and optimization of the electronic and optoelectronic properties. Herein, we report a one-step chemical vapor deposition method for the growth of band alignment continuously modulated WS2-WS2(1- x)Se2 x (0 < x ≤ 1) monolayer lateral heterostructures, with atomically sharp interfaces at the junction area. Local photoluminescence (PL) and Raman measurements demonstrate the position-dependent composition and band gap information on the as-grown nanosheets. Kelvin probe force microscopy (KPFM) investigations further confirm the tunable band alignments in the heterostructures, where a continuously decreased Fermi level difference between the core and the shell regions is observed with the x value varied from 1 to 0. The direct growth of high-quality atomic-level junctions with controllable band alignment marks an important step toward the potential applications of 2D semiconductors in integrated electronic and optoelectronic devices.
Hybrid Heterostructures And Devices Based On Two-Dimensional Layers And Wide Bandgap Materials

Z. Wu,W. Jie,Z. Yang,J. Hao

DOI: https://doi.org/10.1016/j.mtnano.2020.100092

IF: 10.3

2020-01-01

Materials Today Nano

Abstract:With the further development of Moore's law, the process nodes of integrated circuit have reached 7 nm or even smaller size. In addition to the significant increase in cost, when the scale continues to shrink, there will inevitably be short channel effect. For example, because of tunneling and reduction in the separation of drain and barrier, the channel will be difficult to be completely turned off, thus reducing the switching performance of the device. Significant efforts have been dedicated for developing next-generation devices and applications to overcome these obstacles. The emerging van der Waals (vdW) heterostructures, where two-dimensional (2D) materials are physically layer by layer stacked without constraints on the chemical bonding and interfacial lattice matching, have offered an alternative platform in nanoscale electronic and optoelectronic applications. Beyond all 2D materials based vdW heterostructures, the concept could be extended to integrate 2D materials with conventional wide bandgap (WBG) functional materials. Here, we summarize recent developments of 2D-WBG hybrid heterostructures starting from the integration process and working principle. Then, we highlight the functions and device applications of 2D-WBG hybrid heterostructures, including ferroelectric gating, piezoelectric strain engineering, photodetectors, field-effect transistors, photocatalysts, and gas sensors. Finally, we provide a brief discussion on the perspectives and challenges in this exciting field. (C) 2020 Elsevier Ltd. All rights reserved.
Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO3 (Adv. Funct. Mater. 49/2023)

Haoran Long,Hao Liu,Xiaoyu Wang,Bowen Wang,Ruixue Bai,Yali Yu,Kaiyao Xin,Liyuan Liu,Yingqiang Xu,Jing Zhang,Fagang Jiang,Xinghua Wang,Zhongming Wei,Juehan Yang

DOI: https://doi.org/10.1002/adfm.202370289

IF: 19

2023-12-02

Advanced Functional Materials

Abstract:Machine Vision In article number 2306241, Xinghua Wang, Zhongming Wei, Juehan Yang, and co‐workers present photodetectors based on AsSbO3 nanosheets that are able to realize highly selective and high‐performance detection in the solar‐blind ultraviolet band, benefiting from the ultra‐wide bandgap. Owing to the remarkable anisotropic crystal structure, AsSbO3 also shows significant linear dichroism and nonlinear optical properties.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Bingqi Sun,Jing Xu,Min Zhang,Longfei He,Hao Zhu,Lin Chen,Qingqing Sun,David Wei Zhang

DOI: https://doi.org/10.3390/cryst8060252

IF: 2.7

2018-01-01

Crystals

Abstract:Two-dimensional (2D) semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS) devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs), and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.
2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications

Madani Labed,Ji-Yun Moon,Seung-Il Kim,Jang Hyeok Park,Justin S Kim,Chowdam Venkata Prasad,Sang-Hoon Bae,You Seung Rim

DOI: https://doi.org/10.1021/acsnano.4c09173

IF: 17.1

2024-11-05

ACS Nano

Abstract:Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-Ga2O3 have significantly enhanced the functionality of electronic and optoelectronic devices, particularly in harsh environment conditions. However, some of these materials face challenges such as low thermal conductivity, limited P-type conductivity, and scalability issues, which can hinder device performance under extreme conditions like high temperature and irradiation. In this review paper, we explore the integration of various two-dimensional materials (2DMs) to address these challenges. These materials offer excellent properties such as high thermal conductivity, mechanical strength, and electrical properties. Notably, graphene, hexagonal boron nitride, transition metal dichalcogenides, 2D and quasi-2D Ga2O3, TeO2, and others are investigated for their potential in improving ultrawide bandgap semiconductor-based devices. We highlight the significant improvement observed in the device performance after the incorporation of 2D materials. By leveraging the properties of these materials, ultrawide bandgap semiconductor devices demonstrate enhanced functionality and resilience in harsh environmental conditions. This review provides valuable insights into the role of 2D materials in advancing the field of ultrawide bandgap semiconductors and highlights opportunities for further research and development in this area.
Recent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors

Lixia Wang,Shengming Xu,Jiangang Yang,Hui Huang,Zhe Huo,Jing Li,Xin Xu,Feng Ren,Yunbin He,Yaping Ma,Weifeng Zhang,Xudong Xiao

DOI: https://doi.org/10.1021/acsomega.4c02897

IF: 4.1

2024-06-25

ACS Omega

Abstract:Ultrawide bandgap (UWBG) semiconductors, including Ga(2)O(3), diamond, Al (x) Ga(1-x) N/AlN, featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet photodetection, with applications spanning in environmental monitoring, chemical/biological analysis, industrial processes, and military technologies. Over recent decades, substantial strides in synthesizing high-quality UWBG semiconductors have facilitated the development of diverse high-performance solar-blind...

chemistry, multidisciplinary
Synthesis of lateral heterostructure of 2D materials for optoelectronic devices: challenges and opportunities

Baisali Kundu,Prachi Mohanty,Praveen Kumar,Biswajeet Nayak,Barnali Mahato,Priya Ranjan,Suman Kumar Chakraborty,Satyaprakash Sahoo,Prasana Kumar Sahoo

DOI: https://doi.org/10.1007/s42247-021-00219-0

2021-05-25

Emergent Materials

Abstract:In the increasing demands for exotic device development in the fields of electronics, optoelectronics, sensors, energy, integrated circuits, and quantum technologies, 2D heterostructures can offer tremendous possibilities to sustain Moore’s law. Despite considerable efforts in integrating distinct 2D materials, incomplete understanding of the role of native defects, poor mobility, stability, and low quantum yield poses many challenges for the overall performance of most heterostructure-based devices. In this review, we explore the recent development in the synthesis, strategies for interface modulation, structure–property optimization, and nanofabrication technologies of 2D lateral assembly. Specifically, chemical vapor deposition (CVD) methods and adopting phase and doping engineering for the reliable development of lateral heterostructures are explored in detail. The traditional phase engineering is extrapolated to understand the role of metal/2D semiconductors contact interface, essentially bridging metallic 2D materials as contacts to traditional metal electrodes. The applications of these integrated 2D lateral heterostructures as an active component of many optoelectronics including p-n junction diodes, high-performance transistors, LED, photosensors, and photovoltaics are highlighted. Moreover, we underline the challenges and outlooks to increase the library of 2D lateral geometry in high phase purity and excellent controllability.
Two-dimensional nanomaterials with engineered bandgap: Synthesis, properties, applications

Yu Wang,Ling Wang,Xin Zhang,Xuejing Liang,Yiyu Feng,Wei Feng

DOI: https://doi.org/10.1016/j.nantod.2020.101059

IF: 17.4

2021-04-01

Nano Today

Abstract:<p>Encouraged by its excellent electronic, optical, and mechanical properties, two-dimensional nanomaterials, including graphene, germanene, silicene, phosphorene, transition metal dichalcogenides, hexagonal boron nitride and so on, have generated significant research interests in a wide range of fields. In many applications, bandgap perform an important and even decisive role. However, there are very limited works that focused on a highly comprehensive overview of bandgap engineering in two-dimensional nanomaterials. Here, we review the feasibility, methods, and effects on applications of bandgap engineering in two-dimensional nanomaterials. We first provide a brief introduction on the physical significance of bandgap in two-dimensional nanomaterials. Then, based on the effect on the structure of two-dimensional nanomaterials, we introduce several methods to control and regulate the bandgap. Thereafter, bandgap engineering in different two-dimensional nanomaterials using various methods is summarized in detail. Further, we also emphasize the optimization of application performance through bandgap engineering. Finally, the challenges and outlooks in two-dimensional nanomaterials are proposed based on the current development status and future requirements.</p>

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

Phuong V. Pham,Srikrishna Chanakya Bodepudi,Khurram Shehzad,Yuan Liu,Yang Xu,Bin Yu,Xiangfeng Duan

DOI: https://doi.org/10.1021/acs.chemrev.1c00735

IF: 62.1

2022-02-08

Chemical Reviews

Abstract:A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

Bandgap engineering of two-dimensional semiconductor materials

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Toward Sustainable Ultrawide Bandgap van der Waals Materials: An ab initio Screening Effort (Adv. Funct. Mater. 11/2024)

Recent Progress of Heterostructures Based on Two Dimensional Materials and Wide Bandgap Semiconductors

Wide Band Gap Semiconductor Optoelectronic Materials and Their Applications

Band Structure Engineering in 2D Materials for Optoelectronic Applications

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives

Perspectives of 2D Materials for Optoelectronic Integration

Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications

2D Semiconductors for Specific Electronic Applications: from Device to System

Band Alignment Engineering in Two-Dimensional Lateral Heterostructures

Hybrid Heterostructures And Devices Based On Two-Dimensional Layers And Wide Bandgap Materials

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO3 (Adv. Funct. Mater. 49/2023)

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications

Recent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors

Synthesis of lateral heterostructure of 2D materials for optoelectronic devices: challenges and opportunities

Two-dimensional nanomaterials with engineered bandgap: Synthesis, properties, applications

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges