Synthesis, analysis and characterizations of Dy3+ ions-doped CaBi2Nb2O9 phosphors for optoelectronic device applications

Sheetal Kumari,Pooja Rohilla,Samarthya Diwakar,Rupesh A. Talewar,Ankur Shandilya,Yasha Tayal,K. Swapna,Aman Prasad,A. S. Rao

DOI: https://doi.org/10.1007/s10854-024-12640-2

2024-04-29

Journal of Materials Science Materials in Electronics

Abstract:The current study focuses on the synthesis and other detailed studies on CaBi 2 Nb 2 O 9 (abbreviated CBNO) phosphor doped with Dy 3+ ions. The aforementioned phosphors were prepared via a solid-state reaction procedure and a comprehensive analysis of the crystal structure, particle morphology, vibrational bands, luminous characteristics, decay and thermal stability of the phosphors was done. Phase identification of the synthesized material was carried out using X-ray diffraction (XRD) technique and the optical bandgap was determined using diffuse reflectance spectra (DRS). The morphological studies and particle size estimation of the phosphor material were conducted using a scanning electron microscope (SEM). Under 452 nm excitation, the photoluminescence (PL) spectra of Dy 3+ -doped CBNO phosphor exhibit three peaks at 482, 576, and 666 nm, which correspond to the transitions 4 F 9/2 → 6 H 15/2 , 6 H 13/2 , and 6 H 11/2 . The electric dipole–dipole interaction was the main mechanism for concentration quenching for Dy 3+ ions. The estimated CIE chromaticity coordinates for Dy 3+ ion-doped CBNO phosphors fall in the white region. The temperature-dependent PL (TD-PL) findings reveals that CBNO phosphors have a considerably superior thermal stability. The results of these investigations suggest that the CBNO phosphors doped with Dy 3+ ions exhibit promising properties that could be used for prospective w-LEDs and other optoelectronic device applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied