Abstract:Ferroelectric materials with internal spontaneous polarization are conducive to enhancing photocatalytic performance by promoting photogenerated carriers separation. However, the traditional perovskite-type ferroelectric photocatalysts possess a typical 3D structure that is constrained by few exposed catalytic active sites and low specific surface area when compared to a 2D structure. In our study, the electronic properties of the 2D ferroelectric heterostructure for carbon and oxygen co-doping g-C3N4 (COCN)/In2Se3 with different out-of-plane ferroelectric polarization directions are investigated by first-principle calculations, namely, COCN/DOWN and COCN/UP heterostructures. The results show that when the ferroelectric polarization of the 2D In2Se3 layer in heterostructures is reversed, the heterostructure switches from traditional type-II (COCN/DOWN heterostructure) with an indirect bandgap of 1.58 eV to S-scheme (COCN/UP heterostructure) with a direct bandgap of 1.43 eV, in which the band edge positions of the S-scheme COCN/UP heterostructure satisfy the redox potential of the efficient photocatalytic selective oxidation of toluene to benzaldehyde. Further investigations revealed that the application of an electric field 0 ∼ +0.3 V/Å can reduce the bandgap and enhance the out-of-plane polarization of the COCN/UP heterostructure, which improve the photocatalytic activity of the S-scheme COCN/UP heterostructure. This work highlights the significance of ferroelectric polarization for charge transfer in heterostructures and provides theoretical guidance for the design of high-performance S-scheme photocatalysts.

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