A Deep Analysis and Enhancing Photovoltaic Performance Above 31% with New Inorganic RbPbI3‐Based Perovskite Solar Cells via DFT and SCAPS‐1D

Md. Ferdous Rahman,Md. Harun‐Or‐Rashid,Md. Rasidul Islam,Ahmad Irfan,Aijaz Rasool Chaudhry,Md. Atikur Rahman,Samah Al‐Qaisi
DOI: https://doi.org/10.1002/adts.202400476
2024-07-30
Advanced Theory and Simulations
Abstract:In this research, a novel rubidium‐lead‐iodide (RbPbI3)‐based (Al/FTO/SnS2/RbPbI3/Au) perovskite solar cells is designed and optimized using both DFT, and SCAPS‐1D simulator. The proposed perovskite structure exhibits outstanding power conversion efficiency (PCE) of 31.11% for the SnS2 Electron Transport Layer (ETL), with a JSC of 32.47 mA cm−2, VOC of 1.10 V, and FF of 87.14%. The inimitable structural, electronic, and optical properties of inorganic cubic rubidium‐lead‐halide perovskite have obtained significant attention. In this research, novel rubidium‐lead‐iodide (RbPbI3)‐based perovskite solar cells incorporating Tin Sulfide (SnS2) is investigated as an efficient buffer layer, utilizing both Density Functional Theory (DFT) calculations and SCAPS‐1D simulator. Primarily, DFT is used to compute the bandgap, partial density of states (PDOS), and optical properties of the RbPbI3 absorber, which are then applied in the SCAPS‐1D simulator. An optimized Al/FTO/SnS2/RbPbI3/Au device is systematically studied. Additionally, the effect of various influencing factors are investigated such as layer bulk defect density, interface defect density, doping concentration, and thickness. The highest power conversion efficiency (PCE) of 31.11% is achieved for the SnS2 Electron Transport Layer (ETL), with a JSC of 32.47 mA cm−2, VOC of 1.10 V, and FF of 87.14% for the Al/FTO/SnS2/RbPbI3/Au structure. Characteristics of quantum efficiency (QE) are also analyzed. Therefore, SnS2 ETL demonstrates the robust potential for utilization in high‐performance photovoltaic cells based on RbPbI3 perovskite.
multidisciplinary sciences
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