Elastic Molecular‐Assisted Fabrication of Orthorhombic Non‐Perovskite CsPbI2Br for Ultralow Dark Current in Advanced X‐Ray Imaging

Ting Han,Zhiyu Xue,Haiqing Qin,Aimiao Qin,Yong Xiang,Xinyu Wang,Xiaoran Hu,Jue Gong,Zhenlin Li
DOI: https://doi.org/10.1002/adom.202400480
IF: 9
2024-06-28
Advanced Optical Materials
Abstract:A polymer elastic molecular‐assisted strategy is used to fabricate high‐quality hundred‐micrometer orthorhombic non‐perovskite δ‐CsPbI2Br thick films at low temperatures. The wide bandgap and high resistivity of δ‐CsPbI2Br thick film reduce dark current, enhance the signal‐to‐noise ratio, lower the X‐ray detection limit, and facilitate flat‐panel X‐ray imaging. In the pursuit of low‐dose flat‐panel X‐ray detection and imaging, controlling dark current is pivotal. Modulating the bandgap and resistivity of photosensitive materials is one of the methods to reduce dark current. The study introduces a novel approach by first demonstrating a non‐perovskite orthorhombic phase δ‐CsPbI2Br thick film, fabricated using an innovative elastic molecular‐assisted coating strategy. This technique results in a material with an optimized bandgap of 2.30 eV and a significantly elevated resistivity of 2.42 × 1010 Ω cm. Consequently, this leads to an ultralow dark current of 1.34 nA cm−2. Leveraging this advancement, the developed X‐ray detectors showcase a groundbreaking low detection limit of 53 nGyair s−1, surpassing the performance of their cubic‐phase counterparts. Remarkably, the material exhibits excellent phase stability, maintaining its properties for up to 80 days. By integrating with a thin‐film transistor array, a flat‐panel X‐ray detector that delivers high‐quality 8‐bit imaging across a 64 × 64 matrix is successfully engineered. This work not only presents a transformative approach to substantially reduce dark current in low‐dose X‐ray detection but also sets a new benchmark in the field by combining enhanced imaging capability with robust long‐term stability.
materials science, multidisciplinary,optics
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