Rewritable nanoscale oxide photodetector

Patrick Irvin,Yanjun Ma,Daniela F. Bogorin,Cheng Cen,Chung Wung Bark,Chad M. Folkman,Chang-Beom Eom,Jeremy Levy

DOI: https://doi.org/10.1038/nphoton.2010.238

2010-09-14

Abstract:Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of the most challenging aspects of device development. Here we report the development of rewritable nanoscale photodetectors created at the interface between LaAlO3 and SrTiO3. Nanowire junctions with characteristic dimensions 2-3 nm are created using a reversible AFM writing technique. These nanoscale devices exhibit a remarkably high gain for their size, in part because of the large electric fields produced in the gap region. The photoconductive response is gate-tunable and spans the visible-to-near-infrared regime. The ability to integrate rewritable nanoscale photodetectors with nanowires and transistors in a single materials platform foreshadows new families of integrated optoelectronic devices and applications.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a rewritable nanoscale photodetector in order to achieve more efficient integration of photon and electronic devices. Specifically, the authors created a nanowire - junction structure with high gain and tunable photoelectric response by using conductive atomic force microscopy (AFM) technology at the interface between LaAlO₃ and SrTiO₃.

### Main problems:
1. **Integration challenges**: Traditionally, integrating photon nanostructures with electronic circuits has been a great challenge. This research aims to overcome this problem by developing a rewritable nano - photodetector based on oxide interfaces.
2. **Nanoscale precision**: Existing photodetectors are usually difficult to achieve precise manufacturing and regulation at the nanoscale. This research shows how to use AFM technology to create, modify and erase photodetectors at the nanoscale, thus achieving extremely high spatial resolution.
3. **Spectral response range**: Traditional nano - photodetectors can often only work within a specific wavelength range. The goal of this research is to develop a wide - spectral - response photodetector that can work from the visible to the near - infrared band.
4. **Tunability**: In order to improve the flexibility and application range of the device, the research also explores how to tune the photoelectric response characteristics of the photodetector through an external gate voltage.

### Solutions:
- **Material selection**: The LaAlO₃/SrTiO₃ interface was selected because this material system can form a quasi - two - dimensional electron gas (q - 2DEG) at the nanoscale and is highly sensitive to the electric field.
- **Manufacturing method**: Using a conductive AFM probe, positive and negative voltages were applied on the LaAlO₃/SrTiO₃ interface to create conductive nanowires and insulating gaps respectively, thus forming a nanowire - junction structure.
- **Performance optimization**: By adjusting conditions such as voltage bias and temperature, the photoelectric response characteristics of the photodetector were optimized, and its performance at different wavelengths was verified.
- **Tunability**: An independent gate electrode was introduced to achieve the regulation of the source - drain current, further enhancing the functionality and application potential of the device.

In conclusion, this research provides new ideas and technical means for the design and manufacturing of future integrated optoelectronic devices, especially achieving important progress in precise control and tunability at the nanoscale.