Memristor: Why do we have to know about it?

M. Jagadesh Kumar

DOI: https://doi.org/10.48550/arXiv.1008.2836

2010-08-17

Abstract:Review on Memristor.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

Memristive Devices and Systems: Modeling, Properties and Applications

Chun Sing Lai,Zhekang Dong,Donglian Qi

DOI: https://doi.org/10.3390/electronics12030765

IF: 2.9

2023-01-01

Electronics

Abstract:The memristor is considered to be a promising candidate for next-generation computing systems due to its nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance [...]
Memristor, mem-systems and neuromorphic applications: a review

Viet-Thanh Pham,Christos Volos,Tomasz Kapitaniak

DOI: https://doi.org/10.1016/b978-0-12-821184-7.00022-0

2021-01-01

Abstract:The memristor has received significant attention recently. The memristor is a potential candidate for various applications like switching devices, low-power sensors, neural networks, bio-inspired implementations, memory elements, programmable logic, signal processing, and so on. It is worth noting that researchers have attempted to evaluate the impact of the memristor for fast computation like artificial intelligence chips. In this chapter, we would like to summarize briefly recent researches related to memristor, mem-systems, and their neuromorphic applications. Especially, neuromorphic circuits and artificial intelligence applications are addressed. In addition, challenges, current issues and future trends are discussed.
Memristors for the Curious Outsiders

Francesco Caravelli,Juan Carbajal

DOI: https://doi.org/10.3390/technologies6040118

2018-12-09

Technologies

Abstract:We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an internal parameter. We provide an brief historical introduction, as well as an overview over the physical mechanism that lead to memristive behavior. This review is meant to guide nonpractitioners in the field of memristive circuits and their connection to machine learning and neural computation.

English Else
Memristor nanodevice for unconventional computing:review and applications

Mahyar Shahsavari,Pierre Boulet

DOI: https://doi.org/10.48550/arXiv.1703.00331

2017-03-01

Abstract:A memristor is a two-terminal nanodevice that its properties attract a wide community of researchers from various domains such as physics, chemistry, electronics, computer and <a class="link-external link-http" href="http://neuroscience.The" rel="external noopener nofollow">this http URL</a> simple structure for manufacturing, small scalability, nonvolatility and potential of using inlow power platforms are outstanding characteristics of this emerging nanodevice. In this report,we review a brief literature of memristor from mathematic model to the physical realization. Wediscuss different classes of memristors based on the material used for its manufacturing. Thepotential applications of memristor are presented and a wide domain of applications are explainedand classified.

Emerging Technologies
A review of memristor: material and structure design, device performance, applications and prospects

Yongyue Xiao,Bei Jiang,Xin Chen,Shanwu Ke,Yaoyao Jin,Xin Wen,Cong Ye

DOI: https://doi.org/10.1080/14686996.2022.2162323

IF: 7.821

2023-03-01

Science and Technology of Advanced Materials

Abstract:With the booming growth of artificial intelligence (AI), the traditional von Neumann computing architecture based on complementary metal oxide semiconductor devices are facing memory wall and power wall. Memristor based in-memory computing can potentially overcome the current bottleneck of computer and achieve hardware breakthrough. In this review, the recent progress of memory devices in material and structure design, device performance and applications are summarized. Various resistive switching materials, including electrodes, binary oxides, perovskites, organics, and two-dimensional materials, are presented and their role in the memristor are discussed. Subsequently, the construction of shaped electrodes, the design of functional layer and other factors influencing the device performance are analyzed. We focus on the modulation of the resistances and the effective methods to enhance the performance. Furthermore, synaptic plasticity, optical-electrical properties, the fashionable applications in logic operation and analog calculation are introduced. Finally, some critical issues such as the resistive switching mechanism, multi-sensory fusion, system-level optimization are discussed. GRAPHICAL

materials science, multidisciplinary
Review on Various Memristor Models, Characteristics, Potential Applications, and Future Works

Muhammad Khalid

DOI: https://doi.org/10.1007/s42341-019-00116-8

2019-06-29

Transactions on Electrical and Electronic Materials

Abstract:In this paper, basic theory of novel devices as memristors, their models, and I–V characteristic have been discussed. They can be used in various potential applications related with different areas of engineering are enlisted. Recent application in areas of engineering field is neuromorphic which has been introduced. A memristive device has many advantages: nonvolatility, good scalability, effectively no leakage current, and compatibility with CMOS technology and so on. The literature review and future works cover the major findings and mile-stones researches in this field from beginning of the invention.
Memristor - The fictional circuit element

Isaac Abraham

DOI: https://doi.org/10.48550/arXiv.1808.05982

2018-08-17

Emerging Technologies

Abstract:The memory resistor abbreviated memristor was a harmless postulate in 1971. In the decade since 2008, a device claiming to be the missing memristor is on the prowl, seeking recognition as a fundamental circuit element, sometimes wanting electronics textbooks to be rewritten, always promising remarkable digital, analog and neuromorphic computing possibilities. A systematic discussion about the fundamental nature of the device is almost universally absent. This report investigates the assertion that the memristor is a fundamental passive circuit element, from the perspective that electrical engineering is the science of charge management. With a periodic table of fundamental elements, we demonstrate that there can only be three fundamental passive circuit elements. The ideal memristor is shown to be an unphysical active device. A vacancy transport model further reveals that a physically realizable memristor is a nonlinear composition of two resistors with active hysteresis.
Memristors for Memory and Computing Applications

Yuchao Yang

DOI: https://doi.org/10.1364/isst.2017.isu4b.1

2017-01-01

Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].
Handbook of Memristor Networks

DOI: https://doi.org/10.1007/978-3-319-76375-0

2019-01-01

Abstract:This Handbook presents all aspects of memristor networks in an easy to read and tutorial style. Including many colour illustrations, it covers the foundations of memristor theory and applications, the technology of memristive devices, revised models of the Hodgkin-Huxley Equations and ion channels, neuromorphic architectures, and analyses of the dynamic behaviour of memristive networks. It also shows how to realise computing devices, non-von Neumann architectures and provides future building blocks for deep learning hardware. With contributions from leaders in computer science, mathematics, electronics, physics, material science and engineering, the book offers an indispensable source of information and an inspiring reference text for future generations of computer scientists, mathematicians, physicists, material scientists and engineers working in this dynamic field.
A review on memristor applications

Roberto Marani,Gennaro Gelao,Anna Gina Perri

DOI: https://doi.org/10.48550/arXiv.1506.06899

2015-06-23

Abstract:This article presents a review on the main applications of the fourth fundamental circuit element, named "memristor", which had been proposed for the first time by Leon Chua and has recently been developed by a team at HP Laboratories led by Stanley Williams. In particular, after a brief analysis of memristor theory with a description of the first memristor, manufactured at HP Laboratories, we present its main applications in the circuit design and computer technology, together with future developments.

Materials Science,Emerging Technologies
Materials for Memristors

Mario Lanza,He Tian

DOI: https://doi.org/10.1002/adfm.202314512

IF: 19

2024-01-01

Advanced Functional Materials

Abstract:Memristive devices are entering in our lives.They have started to be commercialized as non-volatile electronic memory, and despite their market size is still small, it is expected to increase up to 5.6 billion USD by 2026. [1]Moreover, recent investigations have shown that memristors hold great potential for applications in the fields of brain-inspired neuromorphic engineering, cryptography, and 5G/6G telecommunications. [2]This is surprising because such applications require figures-of-merit that are completely different and sometimes even opposite.For example, memristors used as non-volatile memory must exhibit very low variations of switching parameters to ensure a very high yield; [3] and, on the contrary, memristors for cryptography must exhibit very high and unpredictable variations of those same switching parameters. [4]he clue behind the versatility of memristors relies on the materials employed.Memristors are materials systems with two or three (sometimes even more) electrodes separated by an insulating or semiconducting material. [5]The use of different types of materials is a valuable tool allowing to adjust the electrical characteristics and figures-of-merit of the memristors.The reason is that different materials use different physical and chemical reactions to produce the resistance change, and those phenomena have associated different speed, energy, variability, and reliability.For example, one can find in the market memristive memories made of magnetic materials, phase-change materials, or metaloxide materials, all of them showing strengths and weaknesses, [1] as shown in Figure 1.Intense research in the field of memristors is highly necessary for two reasons.The first one is to optimize the properties of those memristors that exhibited potential for some applications.Many articles have claimed that memristors could be useful for diverse applications but bringing them to the market requires intense work to optimize not only performance, variability, and yield. [2][3 And the second reason is to discover new functionalities, not only in terms of electrical figures-ofmerit but also mechanical, optical, and thermal properties that could enable their use in different objects and environments.
The future of electronics based on memristive systems

Mohammed A. Zidan,John Paul Strachan,Wei D. Lu

DOI: https://doi.org/10.1038/s41928-017-0006-8

IF: 33.255

2018-01-01

Nature Electronics

Abstract:A memristor is a resistive device with an inherent memory. The theoretical concept of a memristor was connected to physically measured devices in 2008 and since then there has been rapid progress in the development of such devices, leading to a series of recent demonstrations of memristor-based neuromorphic hardware systems. Here, we evaluate the state of the art in memristor-based electronics and explore where the future of the field lies. We highlight three areas of potential technological impact: on-chip memory and storage, biologically inspired computing and general-purpose in-memory computing. We analyse the challenges, and possible solutions, associated with scaling the systems up for practical applications, and consider the benefits of scaling the devices down in terms of geometry and also in terms of obtaining fundamental control of the atomic-level dynamics. Finally, we discuss the ways we believe biology will continue to provide guiding principles for device innovation and system optimization in the field.

engineering, electrical & electronic
Memristive System Based Image Processing Technology: A Review and Perspective

Xiaoyue Ji,Zhekang Dong,Guangdong Zhou,Chun Sing Lai,Yunfeng Yan,Donglian Qi

DOI: https://doi.org/10.3390/electronics10243176

IF: 2.9

2021-01-01

Electronics

Abstract:As the acquisition, transmission, storage and conversion of images become more efficient, image data are increasing explosively. At the same time, the limitations of conventional computational processing systems based on the Von Neumann architecture continue to emerge, and thus, improving the efficiency of image processing has become a key issue that has bothered scholars working on images for a long time. Memristors with non-volatile, synapse-like, as well as integrated storage-and-computation properties can be used to build intelligent processing systems that are closer to the structure and function of biological brains. They are also of great significance when constructing new intelligent image processing systems with non-Von Neumann architecture and for achieving the integrated storage and computation of image data. Based on this, this paper analyses the mathematical models of memristors and discusses their applications in conventional image processing based on memristive systems as well as image processing based on memristive neural networks, to investigate the potential of memristive systems in image processing. In addition, recent advances and implications of memristive system-based image processing are presented comprehensively, and its development opportunities and challenges in different major areas are explored as well. By establishing a complete spectrum of image processing technologies based on memristive systems, this review attempts to provide a reference for future studies in the field, and it is hoped that scholars can promote its development through interdisciplinary academic exchanges and cooperation.
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Min-Kyu Song,Ji-Hoon Kang,Xinyuan Zhang,Wonjae Ji,Alon Ascoli,Ioannis Messaris,Ahmet Samil Demirkol,Bowei Dong,Samarth Aggarwal,Weier Wan,Seok-Man Hong,Suma George Cardwell,Irem Boybat,Jae-sun Seo,Jang-Sik Lee,Mario Lanza,Hanwool Yeon,Murat Onen,Ju Li,Bilge Yildiz,Jesús A. del Alamo,Seyoung Kim,Shinhyun Choi,Gianluca Milano,Carlo Ricciardi,Lambert Alff,Yang Chai,Zhongrui Wang,Harish Bhaskaran,Mark C. Hersam,Dmitri Strukov,H.-S. Philip Wong,Ilia Valov,Bin Gao,Huaqiang Wu,Ronald Tetzlaff,Abu Sebastian,Wei Lu,Leon Chua,J. Joshua Yang,Jeehwan Kim,Jesús A. del Alamo

DOI: https://doi.org/10.1021/acsnano.3c03505

IF: 17.1

2023-06-30

ACS Nano

Abstract:Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Review of Study on Memristor

ZU Yun-xiao,YU Xin-jie

DOI: https://doi.org/10.3969/j.issn.1008-0686.2010.06.019

2010-01-01

Abstract:Memristor is a new passive circuit element which provides a functional relation between charge and magnetic flux. Memristor can be called the fourth circuit element. The basic concept, model and mathematical expression of memristor are introduced firstly, and then the review about study on memristor in China and other countries is given. The study on memristor focused on its mathematical model, properties and the performances of some simple circuits which are consist of memristor and other elements in China. In other conutries the study focused on the memrisor potential application in all fields and the deduction of memcapacitor, meminductor, the memcapacitative and meminductive systems based on memristor.
Memristive Computing Devices and Applications

Mohammed A. Zidan,An Chen,Giacomo Indiveri,Wei D. Lu

DOI: https://doi.org/10.1007/s10832-017-0103-0

2017-01-01

Journal of Electroceramics

Abstract:Advances in electronics have revolutionized the way people work, play and communicate with each other. Historically, these advances were mainly driven by CMOS transistor scaling following Moore’s law, where new generations of devices are smaller, faster, and cheaper, leading to more powerful circuits and systems. However, conventional scaling is now facing major technical challenges and fundamental limits. New materials, devices, and architectures are being aggressively pursued to meet present and future computing needs, where tight integration of memory and logic, and parallel processing are highly desired. To this end, one class of emerging devices, termed memristors or memristive devices, have attracted broad interest as a promising candidate for future memory and computing applications. Besides tremendous appeal in data storage applications, memristors offer the potential to enable efficient hardware realization of neuromorphic and analog computing architectures that differ radically from conventional von Neumann computing architectures. In this review, we analyze representative memristor devices and their applications including mixed signal analog-digital neuromorphic computing architectures, and highlight the potential and challenges of applying such devices and architectures in different computing applications.
Memristive technologies for data storage, computation, encryption, and radio-frequency communication

Mario Lanza,Abu Sebastian,Wei D. Lu,Manuel Le Gallo,Meng-Fan Chang,Deji Akinwande,Francesco M. Puglisi,Husam N. Alshareef,Ming Liu,Juan B. Roldan

DOI: https://doi.org/10.1126/science.abj9979

IF: 56.9

2022-06-04

Science

Abstract:Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non–von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.

multidisciplinary sciences
From fundamentals to frontiers: a review of memristor mechanisms, modeling and emerging applications

Parth Thakkar,Jeny Gosai,Himangshu Jyoti Gogoi,Ankur Solanki

DOI: https://doi.org/10.1039/d3tc03692h

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:The escalating demand for artificial intelligence (AI), the internet of things (IoTs), and energy-efficient high-volume data processing has brought the need for innovative solutions to the forefront.

materials science, multidisciplinary,physics, applied
A Study on Unified Modelling Approach for Memristor: Next Generation Semiconductor Devices

Dr. K. Paramasivam,,Ameer M,Bala Krishna R M,Kishore K

DOI: https://doi.org/10.59256/ijsreat.20240403005

2024-05-16

Abstract:This research investigates the voltage-current (V-I) characteristics of three distinct memristor models, each representing a unique composition and behaviour. The model, denoted as TiN-TiOx-HfOx-Pt-Bilayered Memristor model, is a compact representation designed for Metal–Oxide Resistive Random Access Memory (RRAM). Matlab tool is used for the simulation to analyse V-I characteristics of Memristor. Through comprehensive analysis and simulations, we aim to provide a detailed insight into the intrinsic behaviours of the memristor models. Understanding the V-I characteristics of these models is crucial for their potential applications in emerging memory technologies. This Study elaborate the mathematical modelling of memristor with the outcome untuned V-I Characteristics - DC Switching characteristics. The findings contribute to the broader field of memristor research, fostering advancements in electronic memory devices and computational systems
Fundamental Issues and Problems in the Realization of Memristors

Paul Meuffels,Rohit Soni

DOI: https://doi.org/10.48550/arXiv.1207.7319

2012-07-31

Mesoscale and Nanoscale Physics

Abstract:In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film containing a region which is highly self-doped with oxygen vacancies and a region which is less doped, i.e., a single-phase material with a built-in chemical inhomogeneity sandwiched between two platinum electrodes. On base of the proposed model, Strukov et al. [1] were able to obtain the characteristic dynamical state equation and current-voltage relation for a genuine memristor. However, some fundamental facts of electrochemistry have been overlooked by the authors while putting forward their model, namely the coupling of diffusion currents at the boundary between both regions. The device will operate for a certain time like a "chemical capacitor" until the chemical inhomogeneity is balanced out, thus violating the essential requirement on a genuine memristor, the so-called "no energy discharge property". Moreover, the dynamical state equation for the HP-memristor device must fail as this relation violates by itself Landauer's principle of the minimum energy costs for information processing. Maybe, such an approach might be upheld if one introduces an additional prerequisite by specifying the minimum amount of electric power input to the device which is required to continuously change internal, physical states of the considered system. However, we have reasonable doubts with regard to this.

Memristor: Why do we have to know about it?

Memristive Devices and Systems: Modeling, Properties and Applications

Memristor, mem-systems and neuromorphic applications: a review

Memristors for the Curious Outsiders

Memristor nanodevice for unconventional computing:review and applications

A review of memristor: material and structure design, device performance, applications and prospects

Review on Various Memristor Models, Characteristics, Potential Applications, and Future Works

Memristor - The fictional circuit element

Memristors for Memory and Computing Applications

Handbook of Memristor Networks

A review on memristor applications

Materials for Memristors

The future of electronics based on memristive systems

Memristive System Based Image Processing Technology: A Review and Perspective

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Review of Study on Memristor

Memristive Computing Devices and Applications

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

From fundamentals to frontiers: a review of memristor mechanisms, modeling and emerging applications

A Study on Unified Modelling Approach for Memristor: Next Generation Semiconductor Devices

Fundamental Issues and Problems in the Realization of Memristors