Hot electron transport in suspended multilayer graphene

Sungbae Lee,Nelka Wijesinghe,Carlos Diaz-Pinto,Haibing Peng

DOI: https://doi.org/10.1103/PhysRevB.82.045411

2010-07-11

Abstract:We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been observed at source drain bias Vd = 0, along with anomalies at higher Vd likely induced by optical phonon scattering. For devices with low contact barriers, only the dI/dV dip at Vd = 0 is observed, and we find a well-fit logarithmic dependence of dI/dV on both the bias Vd and the temperature T. The logarithmic Vd dependence is explained with the hot electron effect and the logarithmic T dependence could be attributed to the weak-localization in two-dimensions.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the hot - electron transport characteristics in suspended multilayer graphene devices. Specifically, the author experimentally studied the change of the differential conductance \(dI/dV\) of the suspended multilayer graphene device under different source - drain bias voltages \(V_d\) and temperatures \(T\), and explored the physical mechanisms behind these changes.

### Main problems:
1. **Reasons for the dip in the differential conductance \(dI/dV\) at zero bias voltage \(V_d = 0\)**:
- It was found that when the source - drain bias voltage was zero, the differential conductance \(dI/dV\) showed an obvious dip, and this phenomenon was observed in multiple devices.
- The author excluded the possibility that this dip was related to the energy band structure of graphene or the contact barrier, and finally attributed it to the hot - electron effect. That is, at low bias voltages, electrons hardly interact with phonons, resulting in electrons being heated by the electric field and forming an effective electron temperature higher than the lattice temperature.

2. **Abnormal behavior of \(dI/dV\) at high bias voltages**:
- For devices with a higher contact barrier, abnormal behavior of \(dI/dV\) was observed at a higher source - drain bias voltage \(V_d\), which may be caused by optical phonon scattering.
- For devices with a lower contact barrier, these abnormal phenomena at high bias voltages do not exist because the injected electron energy is not sufficient to excite optical phonons.

3. **Logarithmic dependence of the differential conductance \(dI/dV\)**:
- The experimental results show that for devices with a low contact barrier, \(dI/dV\) shows a logarithmic dependence on both the bias voltage \(V_d\) and the temperature \(T\).
- This logarithmic dependence can be explained by the hot - electron effect and the weak localization in two - dimensional systems.

4. **Verification of weak localization**:
- Through the magnetoconductance experiment, the author further verified the existence of the weak localization phenomenon in suspended multilayer graphene, which is different from the weak localization in single - layer and double - layer graphene, reflecting the chiral characteristics of graphene carriers.

### Summary:
This paper aims to reveal the microscopic mechanisms of hot - electron transport in suspended multilayer graphene devices, especially the behavior of the differential conductance \(dI/dV\) under different bias voltages and temperatures and the physical reasons behind them. By combining experimental data and theoretical analysis, the author proposes that the hot - electron effect and weak localization are the key factors for explaining these phenomena.