Field‐effect Thermoelectric Hotspot in Monolayer Graphene Transistor
Huihui Lu,Huanyi Xue,Daobing Zeng,Guanyu Liu,Liping Zhu,Ziao Tian,Paul K. Chu,Yongfeng Mei,Miao Zhang,Zhenghua An,Zengfeng Di
DOI: https://doi.org/10.1002/adma.202402679
IF: 29.4
2024-06-02
Advanced Materials
Abstract:Graphene is a promising candidate for the thermal management of downscaled microelectronic devices owing to its exceptional electrical and thermal properties. Nevertheless, a comprehensive understanding of the intricate electrical and thermal interconversions at a nanoscale, particularly in field‐effect transistors with prevalent gate operations, remains elusive. In this study, nanothermometric imaging is employed to examine a current‐carrying monolayer graphene channel sandwiched between hexagonal boron nitride dielectrics. We reveal for the first time that beyond the expected Joule heating, the thermoelectric Peltier effect actively plays a significant role in generating hotspots beneath the gated region. With gate‐controlled charge redistribution and a shift in the Dirac point position, we demonstrate an unprecedented systematic evolution of thermoelectric hotspots, underscoring their remarkable tunability. Our study reveals the field‐effect Peltier contribution in a single graphene‐material channel of transistors, offering valuable insights into field‐effect thermoelectrics and future on‐chip energy management. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology