Nano-Raman spectroscopy of silicon surfaces

P. G. Spizzirri,J.-H. Fang,S. Rubanov,E. Gauja,S. Prawer

DOI: https://doi.org/10.48550/arXiv.1002.2692

2010-02-13

Abstract:Near-field enhanced, nano-Raman spectroscopy has been successfully used to probe the surface chemistry of silicon prepared using standard wafer cleaning and processing techniques. The results demonstrate the utility of this measurement for probing the local surface chemical nano-environment with very high sensitivity. Enhancements were observed for the vibrational (stretching) modes of Si-H, F-Si-H and possibly also B-O-Si consistent with the surface treatments applied. The nano-probes did not enhance the phononic features of the silicon substrate.

Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is: how to use near - field enhanced nano - Raman spectroscopy to detect the chemical properties of the silicon surface, especially on the surfaces prepared by standard wafer cleaning and processing techniques. Specifically, the author hopes to use silver nanoparticles as static near - field contact nano - probes to enhance the Raman signal, so as to be able to detect the local chemical environment of the silicon surface with high sensitivity.

### Main research questions:
1. **Detecting the local chemical environment of the silicon surface**:
- Use near - field enhanced nano - Raman spectroscopy to detect the chemical characteristics of the hydrogen - terminated silicon surface and the silicon surface with a thin oxide layer.

2. **Verifying the enhancement effect**:
- Investigate whether silver nanoparticles can significantly enhance the Raman signal of specific vibration modes, such as the stretching vibration mode of the Si - H bond.

3. **Characterizing the surface structure at the nanoscale**:
- Characterize the microstructure and chemical composition of the silicon surface under different treatment conditions by Raman spectroscopy, especially the hydrogen - terminated silicon surface and the thermally grown oxide layer.

4. **Exploring the origin of new characteristic peaks**:
- Explore the new characteristic peaks (such as the peak at 1378 cm⁻¹) observed under near - field enhanced conditions, which may be related to boron doping and are of great significance for understanding the element distribution in the oxide layer.

### Key techniques and methods:
- **Near - field enhanced Raman spectroscopy (PERS)**: Use silver nanoparticles as static probes to enhance the Raman signal.
- **Standard silicon surface treatment techniques**: Including hydrogen - termination treatment and thermally grown oxide layer treatment.
- **Characterization means**: Combine techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), and ellipsometry (SE) for characterization.

Through these studies, the author hopes to provide a simple and effective method for detecting the chemical properties of the silicon surface with high sensitivity, which has important application value for nano - device manufacturing and semiconductor processes.