Dysprosium oxide (Dy 2 O 3 ) layer effect on the interface possessions of Au/n-GaN Schottky diode as an interlayer and its chemical and microstructural features

D. Surya Reddy,V. Rajagopal Reddy,Chel-Jong Choi

DOI: https://doi.org/10.1016/j.mssp.2024.108133

IF: 4.1

2024-01-19

Materials Science in Semiconductor Processing

Abstract:The work reveals the design of Au/dysprosium oxide (Dy 2 O 3 )/n-GaN metal/insulator/semiconductor (MIS)-type structures with a dysprosium oxide interlayer and investigates its microstructural and chemical states using XRD, TEM and XPS approaches. The outcomes confirm that the Dy 2 O 3 film exists on the n-GaN. The electrical properties of the MIS structure are probed by I–V and C–V procedures. A superior rectifying type with a small leakage current was acquired for the MIS structure rather than the Au/n-GaN Schottky diode (SD). Results showed that the MIS structure has a better barrier height (Φ b ) (0.91 eV) than the SD (0.82 eV), representing that the Dy 2 O 3 layer modifies the Φ b . Using Cheung's, Norde and Ψ SP -V plots, the Φ b of the SD and MIS structure are derived and the values are nearly similar, representing that the approaches applied here are valid. The predicted N SS of the MIS structure is two orders smaller than the SD, implying that the Dy 2 O 3 interlayer substantially lowers the N SS . The Poole-Frenkel emission is the foremost current transport at a lower bias, though Schottky emission (SE) is ruled as the current transport at a higher bias of the SD. Nevertheless, the SE is prevailing in the current transport in the MIS structure. Consequences endorse that the Dy 2 O 3 layer can be suitable for building of MIS/MOS devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied