Bi 2 O 2 Se-Based True Random Number Generator for Security Applications
Bo Liu,Ying-Feng Chang,Juzhe Li,Xu Liu,Le An Wang,Dharmendra Verma,Hanyuan Liang,Hui Zhu,Yudi Zhao,Lain-Jong Li,Tuo-Hung Hou,Chao-Sung Lai
DOI: https://doi.org/10.1021/acsnano.2c01784
IF: 17.1
2022-03-25
ACS Nano
Abstract:The fast development of the Internet of things (IoT) promises to deliver convenience to human life. However, a huge amount of the data is constantly generated, transmitted, processed, and stored, posing significant security challenges. The currently available security protocols and encryption techniques are mostly based on software algorithms and pseudorandom number generators that are vulnerable to attacks. A true random number generator (TRNG) based on devices using stochastically physical phenomena has been proposed for auditory data encryption and trusted communication. In the current study, a Bi2O2Se-based memristive TRNG is demonstrated for security applications. Compared with traditional metal–insulator–metal based memristors, or other two-dimensional material-based memristors, the Bi2O2Se layer as electrode with non-van der Waals interface, high carrier mobility, air stability, extreme low thermal conductivity, as well as vertical surface resistive switching shows intrinsic stochasticity and complexity in a memristive true analogue/digital random number generation. Moreover, those analogue/digital random number generation processes are proved to be resilient for machine learning prediction.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.2c01784.Section I: calculation of effective RTN affected area; Section II: the calculation details of encryption and decryption of auditory signals; Section III: Hamming Weight and Hamming Distance; Section IV: an example of Bi2O2Se based TRNG for D-H key exchange protocol; Figure S1, switching performances of Bi2O2Se based memristor under different temperature, ranging from 320 to 380 K; Figure S2, box plot of VBG dependent RTN current, effective influenced area and power consumption of Bi2O2Se based memristor; Figure S3, the female of male voice signals in amplitude and frequency domain; Figure S4, the peripheral circuit design of Bi2O2Se-based TRNG in a bread board (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology