Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Gold-vapor-assisted chemical vapor deposition of aligned monolayer WSe2 with large domain size and fast growth rate

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Growth-Etch Metal-Organic Chemical Vapor Deposition Approach of WS2 Atomic-Layers

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides

Single‐Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Step-edge Controlled Fast Growth of Wafer-Scale MoSe2 Films by MOCVD

Metatungstate Chemical Vapor Deposition of WSe2: Substrate Effects, Shapes, and Morphologies

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Growth of centimeter scale Nb1−xWxSe2 monolayer film by promoter assisted liquid phase chemical vapor deposition

Origin of Ultrafast Growth of Monolayer WSe2 Via Chemical Vapor Deposition

Epitaxial single-crystal growth of transition metal dichalcogenide monolayers via atomic sawtooth Au surface

Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular-beam epitaxy

Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides

Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe 2 Single Crystals on Low‐Cost Soda‐Lime Glass

Wafer-Scale and Deterministic Patterned Growth of Monolayer MoS2 via Vapor-Liquid-Solid Method

Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides