Abstract:Monolayer transition metal dichalcogenides (TMDs) have attracted considerable attention as atomically thin semiconductors for the ultimate transistor scaling. For practical applications in integrated electronics, large monolayer single crystals are essential for ensuring consistent electronic properties and high device yield. The TMDs available today are generally obtained by mechanical exfoliation or chemical vapor deposition (CVD) growth, but are often of mixed layer thickness, limited single crystal domain size or have very slow growth rate. Scalable and rapid growth of large single crystals of monolayer TMDs requires maximization of lateral growth rate while completely suppressing the vertical growth, which represents a fundamental synthetic challenge and has motivated considerable efforts. Herein we report a modified CVD approach with controllable reverse flow for rapid growth of large domain single crystals of monolayer TMDs. With the use of reverse flow to precisely control the chemical vapor supply in the thermal CVD process, we can effectively prevent undesired nucleation before reaching optimum growth temperature and enable rapid nucleation and growth of monolayer TMD single crystals at a high temperature that is difficult to attain with use of a typical thermal CVD process. We show that monolayer single crystals of 450 mu m lateral size can be prepared in 10 s, with the highest lateral growth rate up to 45 mu m/s. Electronic characterization shows that the resulting monolayer WSe2 material exhibits excellent electronic properties with carrier mobility up to 90 cm(2)V(-1)s(-1), comparable to that of the best exfoliated monolayers. Our study provides a robust pathway for rapid growth of high-quality TMD single crystals.

Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe 2 Single Crystals on Low‐Cost Soda‐Lime Glass

Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe2 Single Crystals on Low‐Cost Soda‐Lime Glass

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Large‐Size Monolayer MoSe 2 Single Crystals: Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe 2 Single Crystals on Low‐Cost Soda‐Lime Glass (Adv. Mater. Interfaces 12/2021)

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Ultrafast Nucleation and Growth of High-Quality Monolayer MoSe2 Crystals Via Vapor-Liquid-solid Mechanism

Synthesis of millimeter-scale transition metal dichalcogenides single crystals

Synthesis of millimeter‐scale transition metal dichalcogenides single crystals

Ultrafast Growth of Large Single Crystals of Monolayer WS2 and WSe2

Thickness Tunable Wedding-Cake-like MoS2 Flakes for High-Performance Optoelectronics

An Approach to High-Throughput Growth of Submillimeter Transition Metal Dichalcogenide Single Crystals

Step-edge Controlled Fast Growth of Wafer-Scale MoSe2 Films by MOCVD

High-performance Transistors Based on Monolayer CVD MoS2 Grown on Molten Glass

Batch Production of 6-Inch Uniform Monolayer Molybdenum Disulfide Catalyzed by Sodium in Glass

Fast and large-area growth of uniform MoS2 monolayers on molybdenum foils.

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2

Synthesis of Large-Area Uniform MoS2 Films by Substrate-Moving Atmospheric Pressure Chemical Vapor Deposition: from Monolayer to Multilayer

Seeded Growth Of High-Quality Transition Metal Dichalcogenide Single Crystals Via Chemical Vapor Transport

In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors