Abstract:AbstractThese proceedings contain the contributions of the 3rd Sino–German Symposium “The Silicon Age: Silicon for Microelectronics, Photonics and Photovoltaics”, which was held from 9 to 14 June 2008 in the HNA Hotel, Hangzhou, P.R. China. Nearly 30 scientists from Germany and China were invited to present their views about different aspects of silicon.In the silicon age, microelectronics has driven the high‐speed development of economy, science and technology in the world during the last century and affects now every aspect of our life. Solar cells based on crystalline Si are expected to cover more than 10% of the worldwide energy consumption in a few decades. Furthermore, there are intensive research activities regarding Si‐based photonics, including on‐chip integration of photonics in CMOS IC technology. In addition, new areas being connected with silicon are starting to appear, such as electrical biochips, micro‐opto‐electro‐mechanics or nanotechnology and nanoelectronics. Silicon, one can reasonably argue, is the most intensively studied solid element of all materials in the world. However, there is still a need for continuation of research and development regarding numerous aspects of Si, which are the field of work of many laboratories all over the world. Examples for such ‘hot’ areas are larger Si crystals/wafers, SiGe hetrostructures for high speed devices, Si‐based light emitters, application of Si in new micro‐opto‐electro‐mechanic devices etc.During the 3rd Sino–German symposium, the progress regarding crystalline silicon materials in different areas has been discussed. German and Chinese scientists from universities and research institutes presented their views about the various facets of silicon materials. The symposium provided a forum for a fruitful, intensive and open communication allowing the participants to build up or intensify relationships for a close cooperation in future.We would like to thank all participants of the symposium for their contributions and the Sino–German Science Centre in Beijing for the financial support of the symposium.October 2008

Silicon Lifecycle Management

Special Issue on Silicon Lifecycle Management

Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Special Issue: the Silicon Age

Silicon: the Semiconductor Material

Preface: Phys. Status Solidi C 6/3

Preface: Phys. Stat. Sol. (a) 203/4

Special issue: Current research in life cycle engineering and management

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Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

How Lithography and Metrology Are Enabling Yield in the Next Generation of Semiconductor Patterning

Shaping the Future: Innovations in Silicon Wafer Production and Finishing

(Invited) Calendar Life Prognosis in Si-Containing Li-Ion Batteries

(Invited) Calendar Life Analysis of Si-Containing Anodes for Li-Ion Batteries

Silicon Crystal Growth and Wafer Technologies

Silicon Carbide: Material Growth, Device Processing, and Applications

Single-Crystal Silicon: Growth and Properties

Recent advancement in the development of silicon-based phase change materials

Recent Advancement in the Development of Silicon‐based Phase Change Materials

How Can Smart Technologies Contribute to Sustainable Product Lifecycle Management?

From design to tape-out in SCL 180nm CMOS integrated circuit fabrication technology