Electrical Contact Barriers Between a Three-Dimensional Metal and Layered SnS2.
Chengzhai Lv,Wenjie Yan,Tung-Ho Shieh,Yue Zhao,Gang Wu,Yanfeng Zhao,Yanhui Lv,Duan Zhang,Yanhui Chen,Sunil K. Arora,Cormac O. Coileain,Ching-Ray Chang,Hung Hsiang Cheng,Kuan-Ming Hung,Han-Chun Wu
DOI: https://doi.org/10.1021/acsami.9b21996
IF: 9.5
2020-01-01
ACS Applied Materials & Interfaces
Abstract:Field-effect transistors derived from traditional 3D semiconductors are rapidly approaching their fundamental limits. Layered semiconducting materials have emerged as promising candidates to replace restrictive 3D semiconductor materials. However, contacts between metals and layered materials deviate from Schottky-Mott behavior when determined by transport methods, while X-ray photoelectron spectroscopy measurements suggest that the contacts should be at the Schottky limit. Here, we present a systematic investigation on the influence of metal selection when electrically contacting SnS2, a layered metal dichalcogenide semiconductor with the potential to replace silicon. It is found that the electrically measured barrier height depends also weakly on the work function of the metal contacts with slopes of 0.09 and -0.34 for n-type and p-type Schottky contacts, respectively. Based on the Kirchhoff voltage law and considering a current path induced by metallic defects, we found that the Schottky barrier still follows the Schottky-Mott limits and the electrically measured barrier height mainly originates from the van der Waals gap between the metal and SnS2, and the slope depends on the magnitude of the van der Waals capacitance.