Electric-Field-Tunable Edge Transport in Bernal-Stacked Trilayer Graphene

Saurabh Kumar Srivastav,Adithi Udupa,K. Watanabe,T. Taniguchi,Diptiman Sen,Anindya Das
DOI: https://doi.org/10.1103/physrevlett.132.096301
IF: 8.6
2024-02-28
Physical Review Letters
Abstract:This Letter presents a nonlocal study on the electric-field-tunable edge transport in h -BN-encapsulated dual-gated Bernal-stacked ( ABA ) trilayer graphene across various displacement fields ( D ) and temperatures ( T ). Our measurements revealed that the nonlocal resistance ( RNL ) surpassed the expected classical Ohmic contribution by a factor of at least 2 orders of magnitude. Through scaling analysis, we found that the nonlocal resistance scales linearly with the local resistance ( RL ) only when the D exceeds a critical value of ∼0.2 V/nm . Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold ( T<25 K ). Further, the value of RNL decreases in a linear fashion as the channel length ( L ) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied. https://doi.org/10.1103/PhysRevLett.132.096301 © 2024 American Physical Society
physics, multidisciplinary
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