Abstract:The fundamental problem that limits the solar energy conversion efficiency of conventional semiconductors such as Si is that all absorbed photon energy above the band gap is lost as heat. The critical question that our research addresses is: Can we avoid energy losses in semiconductors ? Hot-carrier systems that avoid such losses have tremendous potential in photovoltaics and solar fuels production, with theoretical efficiencies of 66% (well above the detailed-balance limit of 33%). Ultrathin 2D semiconductors such as monolayer (ML) MoS 2 and WSe 2 have unique physical and photophysical properties that could make hot-carrier energy conversion possible. The specific knowledge gap in the field is how the energy levels of 2D semiconductors move with applied potential and/or illumination, making the driving force for charge transfer (D G 0 ́) unclear. Since D G 0 ́ governs the hot-carrier extraction rate ( k ET ), understanding how and why D G 0 ́ changes under solar fuel generation conditions is critical to controlling k ET relative to the cooling rate. Absence of this critical information is limiting our ability to perform hot-carrier photochemistry. Our research team has employed photocurrent spectroscopy, steady-state absorption spectroscopy, and in situ femtosecond transient absorption spectroscopy as a function of applied potential to characterize underlying steps in a ML MoS 2 photoelectrochemical cell. The rich data set informs us on the timescales for hot-carrier generation/cooling and exciton formation/recombination, as well as the magnitudes of changes in exciton energy levels, exciton binding energies, and the electronic band gap. These findings open the possibility of tuning the hot-carrier extraction rate relative to the cooling rate to ultimately utilize hot-carriers for solar energy conversion applications.

A novel energy level detector for molecular semiconductors

Hybrid Dirac Semimetal-Based Photodetector with Efficient Low-Energy Photon Harvesting

Hot electron spectroscopy: A novel method to study molecular semiconductor

Energy level measurement for organic semiconductors

A novel method for interfacial energy gap determination

Going ballistic: a novel characterization for electronic energy gap

Plasmonic Bound States in the Continuum Metasurface-Semiconductor-Metal Architecture Enables Efficient Hot-Electron-Based Photodetector

A Novel Energy Resolved X-Ray Semiconductor Detector

A mechanically tunable electromagnetic wave harvester and dual-modal detector based on quasi-static van der Waals heterojunction

(Invited) Energy Level Alignment and Hot Carrier Extraction in Monolayer Semiconductor Photoelectrochemical Cells

Direct observation and manipulation of hot electrons at room temperature

A novel high-resolution technique for the study of deep energy levels in semiconductors based on computerized Laplace-DLTS

Accurate molecular recognition from the lowest unoccupied molecular orbital

Photodetector without Electron Transport Layer Based on Hexane-1,6-Diammonium Pentaiodobismuth (HDA-BiI5) Molecular Semiconductor

Ferroelectric enhanced Van der Waals heterojunction polarization detector

Ultrasensitive Self‐Driven Terahertz Photodetectors Based on Low‐Energy Type‐II Dirac Fermions and Related Van der Waals Heterojunctions (Small 1/2023)

High-Performance Ultraviolet to Near-Infrared Antiambipolar Photodetectors Based on 1D CdSxSe1- x/2D Te Heterojunction

Approaching the Collection Limit in Hot Electron Transistors with Ambipolar Hot Carrier Transport

An Energy-Sensitive Interfacial-Superconductor Photodetector

Electrical Characteristics and Photodetect Mechanism of TiO2/AlGaN/GaN Heterostructure-Based Ultraviolet Detectors with Schottky Junction

Hot-Electron Photodetection Based on Graphene Transparent Conductive Electrode