Abstract:We study the effect of insulating oxide substrates on the energy band structure of monolayer and bilayer graphene using a first principles density functional based electronic structure method and a local exchange correlation approximation. We consider two crystalline substrates, SiO2 (or alpha-quartz) and Al2O3 (alpha-alumina or sapphire), each with two surface terminations. We focus on the role of substrate surface dangling states and their passivation in perturbing the linear energy spectrum of graphene. On non-passivated surface terminations, with the relaxation of top surface layers, only Si-terminated quartz retains the linear band structure of graphene due to relatively large equilibrium separation from the graphene layer whereas the other three surface terminations considerably distort it. However, without relaxations of the top surface layer atoms, linear bands appear in the electronic spectrum but with the Dirac point shifted away from the Fermi level. Interestingly, with a second carbon layer on non-passivated oxygen terminated Quartz, with top surface layers relaxation, graphene features appear in the spectrum but sapphire with both surface terminations shows perturbed features even with two carbon layers. By passivating the surface dangling states with hydrogen atoms and without top layer atomic relaxations, the electron-hole symmetry occurs exactly at the Fermi level. This suggests that surface dangling states play a less important role than the atomic relaxations of the top surface layers in distorting the linear spectrum. In all cases we find that the first layer of graphene forms ripples, much like in suspended graphene, but the strength of rippling is found to be weaker probably due to the presence of the substrate.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the influence of insulating oxide substrates on the energy - band structures of single - layer and double - layer graphene, especially the role of surface dangling states and their passivation in perturbing the linear - energy spectra of graphene. Specifically, the research focuses on: 1. **Substrate types and their surface terminations**: Two crystalline substrates - SiO₂ (or α - quartz) and Al₂O₃ (α - alumina or sapphire) were selected for the study, and each substrate has two different surface terminations. 2. **The role of surface dangling bonds**: Explore how un - passivated surface dangling bonds affect the electronic structure of graphene, and analyze the effect of passivating these dangling bonds with hydrogen atoms. 3. **The influence of atomic relaxation**: The degree of perturbation of the linear - energy - band structure of graphene by the relaxation of the top - layer atoms of the substrate was studied. 4. **The influence of multi - layer graphene**: Examine whether adding a second layer of carbon atoms can restore the linear - energy - band structure of graphene in some cases. ### Main findings - **The influence of non - passivated surface dangling bonds**: - Under non - passivated surface terminations, only Si - terminated quartz retains the linear - energy - band structure of graphene after atomic relaxation, while the other three surface terminations significantly distort this structure. - When atomic relaxation is not carried out, the linear - energy band appears in the electronic spectrum, but the Dirac point deviates from the Fermi level. - **The role of atomic relaxation**: - Atomic relaxation determines the equilibrium distance between graphene and the top layer of the substrate, and this distance determines the perturbation intensity of the linear - energy band. - Si - terminated α - quartz can maintain the energy - band structure of graphene even in the case of non - passivated surfaces and atomic relaxation. - **The influence of multi - layer graphene**: - Adding a second layer of carbon atoms on oxygen - terminated quartz and after atomic relaxation can restore the linear - energy - band structure of graphene. - For oxygen - terminated and Al - terminated sapphire, more than two layers of carbon atoms are required to restore the linear - energy - band structure of graphene. - **The passivation effect**: - The presence or absence of surface dangling bonds is not as effective as atomic relaxation in perturbing the linear - energy - band structure. Passivating surface dangling bonds can affect the properties of graphene by changing the equilibrium distance, but it is not the main factor. ### Conclusion This research shows that atomic relaxation plays a crucial role in perturbing the linear - energy - band structure of graphene, rather than the presence or absence of surface dangling bonds. By adjusting the equilibrium distance between the substrate and graphene, the linear - energy - band structure of graphene can be preserved to a certain extent. This is of great significance for the future design of graphene - based electronic devices.

Graphene on Insulating Oxide Substrates: Role of Surface Dangling States

Density functional theory based study of graphene and dielectric oxide interfaces

Interaction between graphene and SiO2 surface

Electronic properties of graphene altered by substrate surface chemistry and externally applied electric field

Hydrogenated graphene on the silicon dioxide surface

Interfacial interactions between local defects in amorphous SiO$_2$ and supported graphene

Lattice Relaxation and Substrate Effects of Graphene Moiré Superlattice

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Modification of electronic surface states by graphene islands on Cu(111)

The Mechanism of Graphene Vapor–Solid Growth on Insulating Substrates

Surface Polar Phonon Dominated Electron Transport in Graphene

Ab Initio Optical Study of Graphene on Hexagonal Boron Nitride and Fluorographene Substrates

Unveiling Temperature-Induced Structural Domains and Movement of Oxygen Vacancies in SrTiO 3 with Graphene

The electronic properties of graphene on metal modified SiO2 substrate

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Dielectric capping effects on binary and ternary topological insulator surface states

Atomic Structure of Graphene on SiO2

Substrates, electron-phonon interactions and the modification of graphene band gaps

Exploring semiconductor substrates for Silicene epitaxy

Surface and interface structure of quasi-free standing graphene on SiC

Substrate Effects on Quasiparticles and Excitons in Graphene Nanoflakes