Adriana Simancas,Justus Braach,Eric Buschmann,Ankur Chauhan,Dominik Dannheim,Manuel Del Rio Viera,Katharina Dort,Doris Eckstein,Finn Feindt,Ingrid-Maria Gregor,Karsten Hansen,Lennart Huth,Larissa Mendes,Budi Mulyanto,Daniil Rastorguev,Christian Reckleben,Sara Ruiz Daza,Judith Schlaadt,Paul Schütze,Walter Snoeys,Simon Spannagel,Marcel Stanitzki,Anastasiia Velyka,Gianpiero Vignola,Håkan Wennlöf

Abstract:Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of technology demonstrators have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Technology demonstrators of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying performance parameters such as cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach.

Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

Effect and suppression of parasitic surface damage in neutron irradiated CMOS Monolithic Active Pixel Sensors

Radiation damage caused by cold neutrons in boron doped CMOS active pixel sensors

Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

Radiation Induced Effects in a Monolithic Active Pixel Sensor : The Mimosa8 Chip

Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process

Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology

Radiation effects on a radiation-tolerant CMOS active pixel sensor

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Combined Reactor Neutron Beam and 60co Γ-Ray Radiation Effects on CMOS APS Image Sensors

Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors

Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology

Characterisation of 3D trench silicon pixel sensors irradiated at 1⋅1017 1 MeV neqcm-2

CACTUS: A depleted monolithic active timing sensor using a CMOS radiation hard technology