Abstract:Magnetic field-driven insulating states in graphene are associated with samples of very high quality. Here, this state is shown to exist in monolayer graphene grown by chemical vapor deposition (CVD) and wet transferred on Al2O3 without encapsulation with hexagonal boron nitride (h-BN) or other specialized fabrication techniques associated with superior devices. Two-terminal measurements are performed at low temperature using a GaAs-based multiplexer. During high-throughput testing, insulating properties are found in a 10 μm long graphene device which is 10 μm wide at one contact with an ≈440 nm wide constriction at the other. The low magnetic field mobility is ≈6000 cm2 V-1 s-1. An energy gap induced by the magnetic field opens at charge neutrality, leading to diverging resistance and current switching on the order of 104 with DC bias voltage at an approximate electric field strength of ≈0.04 V μm-1 at high magnetic field. DC source-drain bias measurements show behavior associated with tunneling through a potential barrier and a transition between direct tunneling at low bias to Fowler-Nordheim tunneling at high bias from which the tunneling region is estimated to be on the order of ≈100 nm. Transport becomes activated with temperature from which the gap size is estimated to be 2.4 to 2.8 meV at B = 10 T. Results suggest that a local electronically high quality region exists within the constriction, which dominates transport at high B, causing the device to become insulating and act as a tunnel junction. The use of wet transfer fabrication techniques of CVD material without encapsulation with h-BN and the combination with multiplexing illustrates the convenience of these scalable and reasonably simple methods to find high quality devices for fundamental physics research and with functional properties.

Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride

One-dimensional magnetic conduction channels across zigzag graphene nanoribbon/hexagonal boron nitride heterojunctions

High Magnetoresistance Ratio on hBN Boron-Vacancy/Graphene Magnetic Tunnel Junction

Magnetic Proximity Effect in Graphene Coupled to A Bifeo3 Nanoplate

Giant Magnetoelectric Effect at the Graphone/ferroelectric Interface

Ultra-thin Van der Waals Magnetic Tunnel Junction Based on Monoatomic Boron Vacancy of Hexagonal Boron Nitride

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers

Electrical Control of Magnetic Proximity Effect in a Graphene/multiferroic Heterostructure

Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers

Effective Zeeman Splitting in Bent Lateral Heterojunctions of Graphene and Hexagonal Boron Nitride: A New Mechanism Towards Half-Metallicity

Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes

Giant Magnetoresistance in a Chemical Vapor Deposition Graphene Constriction

Dirac half-semimetallicity and antiferromagnetism in graphene nanoribbon/hexagonal boron nitride heterojunctions

Magnetic proximity effect in biphenylene monolayer from first-principles

Janus tetragonal Mn2BN monolayer: A 2D polar half-metal with coexistent ferroelectricity and magnetism

Graphene/h-BN Heterostructure Interconnects

Enhanced Half-Metallicity in Orientationally Misaligned Graphene/Hexagonal Boron Nitride Lateral Heterojunctions

π -magnetism and spin-dependent transport in boron pair doped armchair graphene nanoribbons

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition