Pumping properties of the hybrid single-electron transistor in dissipative environment

S.V. Lotkhov,A. Kemppinen,S. Kafanov,J.P. Pekola,A.B. Zorin
DOI: https://doi.org/10.1063/1.3227839
2009-05-21
Abstract:Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed adjacent to this hybrid device. Substantial improvement of pumping and reduction of the subgap leakage were observed in the low-MHz range. At higher frequencies 0.1-1GHz, a slowdown of tunneling due to the enhanced damping and electron heating negatively affected the pumping, as compared to the reference bare devices.
Superconductivity,Mesoscale and Nanoscale Physics
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