One-step synthesis of graphene containing topological defects
Benedikt P. Klein,Matthew A. Stoodley,Joel Deyerling,Luke A. Rochford,Dylan B. Morgan,David Hopkinson,Sam Sullivan-Allsop,Fulden Eratam,Lars Sattler,Sebastian M. Weber,Gerhard Hilt,Alexander Generalov,Alexei Preobrajenski,Thomas Liddy,Leon B. S. Williams,Tien-Lin Lee,Alex Saywell,Roman Gorbachev,Sarah J. Haigh,Christopher Allen,Willi Auwärter,Reinhard J. Maurer,David A. Duncan
2024-11-05
Abstract:Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis.
Materials Science,Mesoscale and Nanoscale Physics