Abstract:UV absorption spectroscopy of artificial cubic boron nitride (cBN) single crystal flake, synthesized under high-temperature and high-pressure, was studied in the present paper. UV WINLAB spectrometer was used in the experiments, and MOLECULAR SPECTROSCOPY software was used for data analysis. The UV-cBN limit of 198 nm was showed in this test by a special fixture quartz sample. We calculated the energy gap by virtue of the formula: lambda0 = 1.24/E(g) (microm). The energy gap is 6. 26 eV. There are many viewpoints about the gap of cBN. By using the first-principles theory to calculate energy band structure and density of electronic states of cBN, an indirect transition due to electronics in valence band jumping into conduction band by absorbing photon can be confirmed. That leads to UV absorption. The method of calculation was based on the quantum mechanics of CASTEP in the commercial software package of Cerius2 in the Co. Accerlrys in the United States. The theory of CASTEP is based on local density approximation or gradient corrected LDA. The crystal parameter of cBN was input to the quantum mechanics of CASTEP in order to construct the crystal parameter model of cBN. We calculated the energy gap of cBN by the method of gradient corrected LDA. The method underestimates the value of nonconductor by about 1 to 2 eV. We gaot some opinions as follows: cBN is indirect band semiconductor. The energy gap is 4.76 eV, less than our experiment. The reason may be defect that we ignored in calculating process. It was reported that the results by first principles method of calculation of the band generally was less than the experimental results. This paper shows good UV characteristics of cBN because of the good agreement of experimental results with the cBN band width. That is a kind of development prospect of UV photo-electronic devices and high-temperature semiconductor devices.

Cubic boron nitride: a new prospective material for ultracold neutron application

V2:Performance of the solid deuterium ultra-cold neutron source at the pulsed reactor TRIGA Mainz

Electronic and optical characterization of bulk single crystals of cubic boron nitride (cBN)

Ultrahard Nanotwinned Cubic Boron Nitride.

Small onion-like BN leads to ultrafine-twinned cubic BN

[Study of cubic boron nitride crystal UV absorption spectroscopy]

$n-n'$ Oscillations: Sensitivity of a first UCN beam experiment

An ultracold neutron storage bottle for UCN density measurements

Identification and thermal stability of point defects in neutron-irradiated hexagonal boron nitride (h-BN)

Experimental investigation of the low molecular weight fluoropolymer for the ultracold neutrons storage

Cerium doped yttrium aluminum perovskite scintillator as an absolute ultracold neutron detector

Time-of-flight spectroscopy of ultracold neutrons at the PSI UCN source

Preparation of cubic boron nitride films by radio frequency magnetron sputtering and radio frequency ion plating

Characterization of electroless nickel-phosphorus plating for ultracold-neutron storage

UCN sources at external beams of thermal neutrons. An example of PIK reactor

Cubic BN optical gap and intragap optically active defects

Monte Carlo Simulations of Trapped Ultracold Neutrons in the UCNτ Experiment

Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

Neutron reflectometry on highly absorbing films and its application to 10B4C-based neutron detectors

Storage of very cold neutrons in a trap with nano-structured walls

Development of a novel boron carbide-based coating material for reduction of activation in neutron application facilities