Mono-, bi- and tri- graphene layers deposited on conductive Au/Cr/SiO2/Si substrate studied by scanning tunnelling spectroscopy

Z. Klusek,P. Dabrowski,P. Kowalczyk,W. Kozlowski,P. Blake,M. Szybowicz,T. Runka,W. Olejniczak

DOI: https://doi.org/10.48550/arXiv.0901.0070

2008-12-31

Abstract:Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive Au/Cr/SiO2/Si substrate shows that gold substrate causes the Fermi level shift downwards which means that holes are donated by metal substrate to graphene which becomes p-type doped. These experimental results are in good accordance with recently published density function theory calculations. The estimated positions of the Dirac point show that the higher number of graphene layers the lower Fermi level shift is observed.

Materials Science

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: to study the local density of states (LDOS) of monolayer, bilayer and trilayer graphene (MG, BG, TG) on the conductive Au/Cr/SiO₂/Si substrate, in order to understand the influence of the metal substrate on the electronic properties of graphene, especially the position change of the Fermi level (\(E_F\)) relative to the Dirac point (\(E_D\)). Specifically, the author focuses on the following aspects:

1. **Doping effect of the metal substrate on graphene**:
- Through scanning tunneling spectroscopy (STS) research, it is found that the gold substrate will cause the Fermi level to move downward, that is, the metal substrate provides holes to graphene, making graphene p - type doped, that is, \(E_F\) is located below \(E_D\).

2. **Differences in the electronic structures of graphene with different numbers of layers**:
- Research shows that as the number of graphene layers increases, the offset of the Fermi level gradually decreases. This is consistent with the recent density - functional theory (DFT) calculation results.
- Through STS measurements of monolayer, bilayer and trilayer graphene, the author finds that the monolayer graphene has a higher local density of states (LDOS) near the Fermi level, while the LDOS of bilayer and trilayer graphene is lower.

3. **Experimental methods and technical verification**:
- The author uses techniques such as optical microscopy (OM), scanning electron microscopy (SEM), Raman spectroscopy (RS) and scanning tunneling microscopy/spectroscopy (STM/STS) to characterize and study graphene samples with different numbers of layers.
- The experimental results show that the 8 - nm - thick gold layer and the 0.5 - nm - thick chromium adhesion layer can still maintain sufficient optical contrast, making it possible to identify graphene with different numbers of layers by optical means.

4. **Consistency between theory and experiment**:
- The experimentally measured Dirac point position is consistent with the DFT calculation results, further verifying the accuracy of the theoretical model.

In summary, this paper aims to deeply understand the specific influence of the metal substrate on the electronic properties of graphene and verify these influences through a variety of experimental means, providing important experimental basis and theoretical support for the future design of graphene - based electronic devices.