Abstract:A number of computational methods have been developed over the last 40 years to simulate the behavior of solid materials with small dimensions. On the macro-scale, Finite Element analysis calculates mechanical stress on micron-sized cantilevers and motors. On the atomic level, newer ab initio methods compute nuclear and electronic behavior of hundred atom models with unprecedented rigor. By implementing the laws of classic mechanics, empirical Molecular Dynamics (MD) programs help bridge these two computational extremes. MD identifies nonelectronic, particle motion for large 100,000 atom cells with good success. MD derives both equilibrium and nonequilibrium properties for many complex condensed regimes; quantitatively (and qualitatively) reaffirms empirical data; aids discovery of new materials processing techniques, and helps predict unknown physical phenomena often only observable under extreme environmental settings. One material of great technical importance to the semiconductor industry is silicon (Si). This element and its oxide (SiO2) play key roles in Complementary Metal-Oxide Semiconductor (CMOS) integrated circuits and in Silicon on Insulator (SOI) technology. Thousands of publications of the structure and function of Si and SiO2 fill the literature. Hundreds of these employ Molecular Dynamics. Herein, we describe the MD process; its particular application to these two materials; explore past research and propose possible directions for future work. While no review can fully comprehend or thoroughly evaluate the entire bibliographic mass, this report provides a starting point for researchers interested in the field. It attempts to uncomplicate the oft-complex mathematics and physics frequently associated with the subject. Little prior knowledge of classic Molecular Dynamics is needed. Although most information is taken directly from MD-related theory, results from experimental or non-MD-related work are occasionally added to help fill in gaps. Finally, because details of every simulation and experiment cited herein cannot be made, the reader is encouraged to refer to specific bibliographic references whenever necessary.

Superconductivity in silicon: a review

A Review on Metastable Silicon Allotropes

Silicon-Germanium and carbon-based superconductors for electronic, industrial, and medical applications

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Liquid-Liquid Phase Transition in Supercooled Silicon

Superconductivity in heavily boron-doped silicon carbide

Review of SiC crystal growth technology

Characterizations on the Doping of Single-Crystal Silicon Carbide

Advancing in Research of One-dimensional Silicon Nano-materials

Hyperdoped silicon: Processing, properties, and devices

Development of SiC Superjunction MOSFET: A Review

High temperature Si–Ge alloy towards thermoelectric applications: A comprehensive review

Empirical Molecular Dynamics Modeling of Silicon and Silicon Dioxide: A Review

A review on single crystal and thin film Si–Ge alloy: growth and applications

Specific heat and electronic states of superconducting boron-doped silicon carbide

Superconducting-Semiconductor Quantum Devices: From Qubits to Particle Detectors

A review of the simulation studies on the bulk growth of silicon carbide single crystals

Recent progress in synthesis, properties and potential applications of SiC nanomaterials

A Comprehensive Review of Recent Progress, Prospect and Challenges of Silicon Carbide and its Applications

Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

Superconductivity of hexagonal heavily-boron doped silicon carbide