Re/Ir@Os-Doping Induced Insulator-to-Metal Transition in a Mott-Insulator Ca2 FeOsO6 : Octahedral Distortions Effects

Safdar Nazir
DOI: https://doi.org/10.1039/d4cp00746h
IF: 3.3
2024-04-24
Physical Chemistry Chemical Physics
Abstract:Regardless of several investigations to elucidate the ground states of the strongly correlated electron systems in doped Mott-insulators (MI), the origin of the doping-induced insulator-to-metal transition (IMT) remains an essential and debatable subject in solid-state physics. Herein, we consistently explore the Re/Ir-doping at the Os-site (Re/Ir@Os) consequences on the physical properties of the MI ferrimagnetic (FiM) Ca2FeOsO6 DPO using density functional theory calculations. The doped structures solidity is analyzed by computing the defect formation energies in terms of the dopants-rich situation, which confirms their growth credibility at ambient conditions along with mechanical and dynamical stabilities. Various FiM spin-ordering are taken into account in the doped structures to analyze the magnetic ground state, which is FiM-I/FiM-II in the Re/Ir@Os-doped system. Remarkably, an IMT is predicted in the Re/Ir@Os-doped structures, which is due to the admixture of the partially occupied 5d orbitals of these ions. The calculated partial spin magnetic moments (ms ) of +4.12, −1.58, −0.75, and +0.88 μB on the Fe, Os, Re, and Ir ions, endorse the +3, +5, +5, and +4 states having electronic configurations of t_2g^3↑ t_2g^0↓ e_g2↑e_g0↓, t_2g^3↑ t_2g^0↓e_g^0↑ e_g^0↓, t_2g^2↑ t_2g^0↓e_g^0↑ e_g^0↓, t_2g^3↑ t_2g^2 ↓ e_g^0↑ e_g0↓, respectively. The "+" and "−" signs on the ions ms values, lead the systems into various FiM magnetic ordering. Moreover, the estimated Curie temperature (TC ) using the Heisenberg model in the pristine is 334 K, which is close to the experimentally observed value of 320 K along with a colossal uniaxial magnetocrystalline anisotropy energy constant (K ) of 2.95 ×107 erg/cm3 having the easy magnetic axis of the ac-plane ([101]). It is established that T_C/K reduces and enhances to 298 K/1.33 ×10^7 erg/cm^3 and 365 K/4.71 ×10^7 erg/cm^3 for Re@Os and Ir@Os-doped motif due to increase and decrease in the octahedral distortions than that of the pristine system, respectively.
chemistry, physical,physics, atomic, molecular & chemical
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