Abstract:We outline a Kohn-Sham-Dirac density-functional-theory (DFT) scheme for graphene sheets that treats slowly-varying inhomogeneous external potentials and electron-electron interactions on an equal footing. The theory is able to account for the the unusual property that the exchange-correlation contribution to chemical potential increases with carrier density in graphene. Consequences of this property, and advantages and disadvantages of using the DFT approach to describe it, are discussed. The approach is illustrated by solving the Kohn-Sham-Dirac equations self-consistently for a model random potential describing charged point-like impurities located close to the graphene plane. The influence of electron-electron interactions on these non-linear screening calculations is discussed at length, in the light of recent experiments reporting evidence for the presence of electron-hole puddles in nearly-neutral graphene sheets.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to use Density Functional Theory (DFT) to describe the electron - electron interaction and the influence of inhomogeneous external electric potential on the system in graphene sheets. Specifically, the author proposes a Kohn - Sham - Dirac density functional theory scheme applicable to graphene sheets, which can simultaneously handle slowly varying inhomogeneous external electric potential and electron - electron interaction. The main contributions of the paper are as follows: 1. **DFT Scheme under Non - uniform Carrier Density**: The paper proposes a new DFT scheme for dealing with the situation of non - uniform carrier density in graphene sheets. This scheme can more accurately describe the electron behavior in graphene, especially in the presence of impurities or defects. 2. **Treatment of Exchange - Correlation Effects**: The paper discusses in detail the contribution of exchange - correlation effects to the chemical potential and points out that in graphene, the contribution of exchange - correlation effects to the chemical potential increases as the carrier density increases. This characteristic is opposite to that in the traditional two - dimensional electron gas, where the exchange - correlation effects usually weaken the screening effect. 3. **Non - linear Screening Calculation**: By solving the Kohn - Sham - Dirac equation, the paper studies the influence of charged point - like impurities near the graphene plane, especially the non - linear screening effects caused by these impurities. The author finds that the electron - electron interaction has a significant impact on these non - linear screening calculations. 4. **Theoretical Verification**: The paper verifies the effectiveness of the proposed DFT scheme through numerical simulation, especially when dealing with randomly distributed charged impurities. The results show that considering the electron - electron interaction can significantly change the spatial distribution of the carrier density, thereby better explaining experimentally observed phenomena, such as the formation of electron - hole puddles. In conclusion, this paper aims to provide a more accurate theoretical framework for describing the complex electron behavior in graphene sheets, especially in the presence of impurities and inhomogeneous electric potential. This not only helps to understand the basic physical properties of graphene but also provides theoretical support for the development of new graphene - based electronic devices.

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