Tunable hybridization of electronic states of graphene and a metal surface

Alexander Gruneis,Denis Vyalikh

DOI: https://doi.org/10.48550/arXiv.0803.2761

2008-03-19

Abstract:We present an approach to monitor and control the strength of the hybridization between electronic states of graphene and metal surfaces. Inspecting the distribution of the $\pi$ band in a high-quality graphene layer synthesized on Ni(111) by angle-resolved photoemission, we observe a new "kink" feature which indicates a strong hybridization between $\pi$ and \textit{d} states of graphene and nickel, respectively. Upon deposition and gradual intercalation of potassium atoms into the graphene/Ni(111) interface, the "kink" feature becomes less pronounced pointing at potassium mediated attenuation of the interaction between the graphene and the substrate.

Materials Science,Strongly Correlated Electrons

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to monitor and control the hybridization strength of the electronic states between graphene and the metal surface. Specifically, by studying the changes in the electronic structure of the graphene layer on the Ni(111) surface, the author explored the influence of the gradual insertion of potassium atoms into the graphene/Ni(111) interface on the hybridization phenomenon.

### Research Background
Since the discovery of two - dimensional metastable graphene sheets, researchers have carried out a large number of studies on their electronic properties because it has a high electron mobility (up to \(15000 \, \text{cm}^2 \text{V}^{-1} \text{s}^{-1}\) at room temperature) and can be successfully patterned by lithography technology. The electronic structure of graphene behaves as a zero - band - gap semiconductor near the Fermi level, its bare band is linear, and the density of states at the Fermi level is zero. These unique properties have led to many fascinating phenomena, such as quasi - relativistic Klein tunneling, anomalous quantum Hall effect, and nodes in optical absorption.

### Core of the Problem
When graphene is combined with a metal surface, strong hybridization and charge transfer will change the band structure of graphene. Especially for the graphene/Ni(111) system, the \(3d_{z^2 - r^2}\) orbital of nickel and the \(2p_z\) orbital of carbon extend in the direction perpendicular to the graphene plane and have a large overlap, resulting in strong hybridization. In addition, the distance between the graphene layer and the Ni(111) surface is significantly smaller than that of bulk graphite, further enhancing this interaction.

### Research Method
The author used angle - resolved photoemission spectroscopy (ARPES) to study the electronic structure of the graphene/Ni(111) system and observed a new "kink" feature in the π - band, which indicates the strong hybridization between graphene and nickel. By gradually depositing potassium atoms on the graphene/Ni(111) interface, the author found that the "kink" feature gradually weakened, indicating that potassium atoms mediated the weakening of hybridization.

### Main Findings
1. **Hybridization Strength Monitoring**: By observing the "kink" feature in the π - band, the hybridization strength between the graphene and nickel states can be successfully monitored.
2. **Charge Transfer Model**: Charge transfer follows the rigid - band - shift model, which is completely consistent with the tight - binding (TB) calculation results.
3. **Role of Potassium Atoms**: The insertion of potassium atoms gradually increases the distance between the graphene and the nickel surface, reduces the overlap of wave functions, and thus weakens the hybridization strength.

### Conclusion
Through this study, the author shows that the graphene/Ni(111) structure can be used as a model system to provide valuable insights into the mechanisms of electron correlation and many - body interactions in solids. In addition, the application prospects of alkali - metal - intercalated high - quality graphene layers are broad and may be used to prepare high - quality graphene layers on different substrates.

### Formula Summary
The main formulas involved in the paper include:
- π - band Hamiltonian matrix:
\[
H(k)=\begin{pmatrix}
\epsilon_{2p}&\gamma_0 f(k)\\
\gamma_0 f^*(k)&\epsilon_{2p}+\Delta
\end{pmatrix}
\]
- π - band overlap matrix:
\[
S(k)=\begin{pmatrix}
1&s f(k)\\
s f^*(k)&1
\end{pmatrix}
\]
- Definition of the function \(f(k)\):
\[
f(k)=\exp\left(i k_x a\sqrt{3}\right)+2\exp\left(-i k_x a\frac{\sqrt{3}}{2}\right)\cos\left(k_y a\frac{1}{2}\right)
\]

These formulas are used to describe the changes in the electronic structure of graphene and are fitted with experimental data.