Magnetoelectric effect in mixed valency oxides mediated by charge carriers

V.A. Stephanovich,M.D. Glinchuk,R. Blinc

DOI: https://doi.org/10.1209/0295-5075/83/37004

2008-03-17

Abstract:We show that the presence of free carriers in a substance can generate the multiferroic behavior. Namely, if the substance has mixed-valence ions, which can supply free carriers and have electric dipole and spin moments, all three types of long-range order (ferromagnetic, ferroelectric and magnetoelectric (ME)) can occur at low temperature. The physical origin of the effect is that charge carriers can mediate the multiferroic behavior via spin - spin (RKKY), dipole-dipole and dipole - spin interactions. Our estimate of the interaction magnitude shows that there exist an optimal carrier concentration, at which the strength of ME interaction is maximal and comparable to that of spin-spin RKKY interaction. This permits to conclude that in substances, where RKKY interaction between local spins is not small, a substantial value of free carriers mediated ME interaction can occur. Our analysis shows that disorder in the above substances does not suppress multiferroic effects.

Materials Science,Disordered Systems and Neural Networks

What problem does this paper attempt to address?

The paper attempts to address the issue of how free carriers generate multiferroic behavior in mixed-valence oxides. Specifically, the authors explore how these free carriers mediate multiferroic behavior through spin-spin (RKKY), dipole-dipole, and dipole-spin interactions when the material contains mixed-valence ions that can provide free carriers. The main goal of the paper is to determine, through theoretical calculations, whether the magnetoelectric (ME) effect mediated by free carriers can reach a strength comparable to that of the RKKY interaction under specific conditions, and whether this effect can remain stable in the presence of disorder.

Key points of the paper include:
1. **Role of free carriers**: Free carriers can mediate multiferroic behavior through various interactions such as RKKY, dipole-dipole, and dipole-spin interactions.
2. **Optimal carrier concentration**: There exists an optimal concentration of free carriers that maximizes the strength of the magnetoelectric effect, making it comparable to the strength of the RKKY interaction.
3. **Impact of disorder**: The paper analyzes the impact of disorder on multiferroic behavior, showing that disorder does not significantly suppress the multiferroic effect and may even promote it by providing additional free carriers.
4. **Physical mechanisms**: The paper discusses in detail the microscopic physical mechanisms of the magnetoelectric effect mediated by free carriers, including the calculation of relevant interaction potentials and Weiss fields.

Overall, the paper aims to reveal the important role of free carriers in multiferroic materials and provide a theoretical foundation for designing new electronic devices with strong magnetoelectric effects.