Strain-induced Landau levels in photonic crystals

Mahmoud Jalali Mehrabad,Mohammad Hafezi

DOI: https://doi.org/10.1038/s41566-024-01453-8

IF: 35

2024-06-07

Nature Photonics

Abstract:Nanofabricated strained photonic crystals in silicon platforms enable the formation of photonic Landau levels at telecommunication wavelengths, with broad potential applications for enhanced light–matter interactions on-chip.

optics,physics, applied

What problem does this paper attempt to address?

Direct observation of Landau levels in silicon photonic crystals

Maria Barsukova,Fabien Grisé,Zeyu Zhang,Sachin Vaidya,Jonathan Guglielmon,Michael I. Weinstein,Li He,Bo Zhen,Randall McEntaffer,Mikael C. Rechtsman

DOI: https://doi.org/10.1038/s41566-024-01425-y

IF: 35

2024-04-24

Nature Photonics

Abstract:When electrons are confined to a two-dimensional plane and are subjected to an out-of-plane magnetic field, they move in circular cyclotron orbits as a result of the Lorentz force. In the quantum domain, this cyclotron motion is quantized, and as a consequence, the energy spectrum of the electrons splits into discrete, highly degenerate states called Landau levels. These flat bands are the origin of the integer and fractional quantum Hall effects 1,2 . Although photons do not experience the Lorentz force because they do not carry charge, they can be made to experience 'pseudomagnetic fields' 3,4 as a result of periodicity-breaking strain. In this work, we experimentally observe photonic Landau levels that arise due to a strain-induced pseudomagnetic field in a silicon photonic crystal slab. The Landau levels are dispersive (that is, they are not flat bands) due to the distortion of the unit cell by the strain. We employ an additional strain of a different form that induces a pseudoelectric potential to flatten them. By acting akin to cavities that are delocalized across space, flat bands such as these have the potential to strongly enhance light–matter interaction as a result of the photonic structure. The analytical framework that we develop here for understanding the effects of inhomogeneous strain in photonic crystals via gauge fields can help to guide the design of multiscale non-periodic photonic structures.

optics,physics, applied
Electrical Manipulation of Lightwaves in the Uniaxially Strained Photonic Honeycomb Lattices under a Pseudomagnetic Field

Zhipeng Qi,Hao Sun,Guohua Hu,Chunyu Deng,Wanghua Zhu,Bo Liu,Ying Li,Shaopeng Liu,Xuechao Yu,Yinping Cui

DOI: https://doi.org/10.1364/prj.486329

IF: 7.6

2023-01-01

Photonics Research

Abstract:The realization of pseudomagnetic fields for lightwaves has attained great attention in the field of nanophotonics.Like real magnetic fields,Landau quantization could be induced by pseudomagnetic fields in the strain-engineered graphene.We demonstrated that pseudomagnetic fields can also be introduced to photonic crystals by exerting a linear parabolic deformation onto the honeycomb lattices,giving rise to degenerate energy states and flat plateaus in the photonic band structures.We successfully inspire the photonic snake modes corresponding to the helical state in the synthetic magnetic heterostructure by adopting a microdisk for the unidirectional coupling.By integrating heat electrodes,we can further electrically manipulate the photonic density of states for the uni-axially strained photonic crystal.This offers an unprecedented opportunity to obtain on-chip robust optical trans-ports under the electrical tunable pseudomagnetic fields,opening the possibility to design Si-based functional topological photonic devices.
Landau levels in strained two-dimensional photonic crystals

J. Guglielmon,M. C. Rechtsman,M. I. Weinstein

DOI: https://doi.org/10.1103/PhysRevA.103.013505

2021-01-06

Abstract:The principal use of photonic crystals is to engineer the photonic density of states, which controls light-matter coupling. We theoretically show that strained two-dimensional photonic crystals can generate artificial electric and magnetic fields that act on light and we show that particular strain ... [Phys. Rev. A 103, 013505] Published Tue Jan 05, 2021
Observation of Landau levels and topological edge states in photonic crystals through pseudomagnetic fields induced by synthetic strain

René Barczyk,L. Kuipers,Ewold Verhagen

2023-06-07

Abstract:The control over light propagation and localization in photonic crystals offers wide applications from sensing and on-chip routing to lasing and quantum light-matter interfaces. While in electronic crystals magnetic fields can be used to induce a multitude of unique phenomena, the uncharged nature of photons necessitates alternative approaches to bring about similar control over photons at the nanoscale. Here, we experimentally realize pseudomagnetic fields in two-dimensional photonic crystals through engineered strain of the lattice. Analogous to strained graphene, this induces flat-band Landau levels at discrete energies. We study the spatial and spectral properties of these states in silicon photonic crystals at telecom wavelengths with far-field spectroscopy. Moreover, taking advantage of the photonic crystal's design freedom, we realize domains of opposite pseudomagnetic field and observe topological edge states at their interface. We reveal that the strain-induced states can achieve remarkably high quality factors despite being phase-matched to the radiation continuum. Together with the high density of states and high degeneracy associated with flat bands, this provides powerful prospects for enhancing light-matter interactions, and demonstrates a design principle to govern both on-chip and radiating light fields.

Optics,Mesoscale and Nanoscale Physics
Observation of Landau levels and chiral edge states in photonic crystals through pseudomagnetic fields induced by synthetic strain

René Barczyk,L. Kuipers,Ewold Verhagen

DOI: https://doi.org/10.1038/s41566-024-01412-3

IF: 35

2024-04-24

Nature Photonics

Abstract:Control over light propagation and localization in photonic crystals offers wide applications ranging from sensing and on-chip routing to lasing and quantum light–matter interfaces. Although in electronic crystals, magnetic fields can be used to induce a multitude of unique phenomena, the uncharged nature of photons necessitates alternative approaches to bring about similar control over photons at the nanoscale. Here we experimentally realize pseudomagnetic fields in two-dimensional photonic crystals through engineered strain of the lattice. Analogous to strained graphene, this induces flat-band Landau levels at discrete energies. We study the spatial and spectral properties of these states in silicon photonic crystals at telecom wavelengths with far-field spectroscopy. Moreover, taking advantage of the photonic crystal's design freedom, we realize domains of opposite pseudomagnetic field and observe chiral edge states at their interface. We reveal that the strain-induced states can achieve remarkably high quality factors despite being phase matched to the radiation continuum. Together with the high density of states and high degeneracy associated with flat bands, this provides powerful prospects for enhancing light–matter interactions, and illustrates the broad potential of psdeudomagnetic fields in the nanophotonic domain. This work, thus, establishes a new design principle to govern both on-chip and radiating light fields.

optics,physics, applied
Realizing One-Dimensional Electronic States in Graphene Via Coupled Zeroth Pseudo-Landau Levels.

Yi-Wen Liu,Zhen Zhan,Zewen Wu,Chao Yan,Shengjun Yuan,Lin He

DOI: https://doi.org/10.1103/physrevlett.129.056803

IF: 8.6

2022-01-01

Physical Review Letters

Abstract:Strain-induced pseudomagnetic fields can mimic real magnetic fields to generate a zero-magnetic-field analog of the Landau levels (LLs), i.e., the pseudo-Landau levels (PLLs), in graphene. The distinct nature of the PLLs enables one to realize novel electronic states beyond what is feasible with real LLs. Here, we show that it is possible to realize exotic electronic states through the coupling of zeroth PLLs in strained graphene. In our experiment, nanoscale strained structures embedded with PLLs are generated along a one-dimensional (1D) channel of suspended graphene monolayer. Our results demonstrate that the zeroth PLLs of the strained structures are coupled together, exhibiting a serpentine pattern that snakes back and forth along the 1D suspended graphene monolayer. These results are verified theoretically by large-scale tight-binding calculations of the strained samples. Our result provides a new approach to realizing novel quantum states and to engineering the electronic properties of graphene by using localized PLLs as building blocks.
Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Abdullah Gok,Xiaowei Wang,Shelley Scott,Abhishek Bhat,Hanfei Yan,Ajith Pattammattel,Evgeny Nazaretski,Yong S. Chu,Zicong Huang,Richard M. Osgood,Max G. Lagally,Roberto Paiella

DOI: https://doi.org/10.1021/acsanm.1c00966

IF: 6.14

2021-06-10

ACS Applied Nano Materials

Abstract:The ability to tailor the energy band lineup of semiconductor materials plays a key role in the development of many electronic and optoelectronic devices and normally relies on heteroepitaxy. Here, we report a different method, based on strain engineering, for the controlled introduction of variations in bandgap energy with lateral position in thin films. External stress is applied on Ge nanomembranes stacked with an array of amorphous-Si pillars in order to create a non-uniform strain (and therefore bandgap energy) distribution commensurate with the sample thickness variations. The resulting strain profiles are mapped using Bragg diffraction with a hard X-ray probe featuring nanoscale spatial resolution. Compared with traditional heterostructures grown by epitaxial techniques, these strain-engineered samples involve a single chemical composition and are not limited in the choice of compatible materials by any restriction imposed by lattice-matching requirements. Furthermore, their energy band lineups can be patterned in nearly arbitrary shapes using nanolithography to control the thickness profile and can be tuned actively by varying the applied stress. As a result, these structures are attractive for a wide range of device applications (including lasers, LEDs, solar cells, and thermoelectrics) that require complex heterostructure lineups with multiple bandgap energies.This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Strain engineering of the electronic states of silicon-based quantum emitters

A. Ristori,N. Granchi,F. Intonti,M. Khoury,D. Hannani,C. M. Ruiz,M. Salvalaglio,A. Filippatos,M. Amato,T. Herzig,J. Meijer,S. Pezzagna,M. Bollani,C. Barri,M. Abbarchi,F. Biccari

2023-06-12

Abstract:Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and it was mostly focused on light extraction and guiding. Here we address the control of the electronic states of carbon-related impurities (G-centers) via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected. Our technique can be extended to other impurities and Si-based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits.

Mesoscale and Nanoscale Physics
Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Zhiwei Peng,Xiaolin Chen,Yulong Fan,David J. Srolovitz,Dangyuan Lei

DOI: https://doi.org/10.1038/s41377-020-00421-5

2020-11-23

Light: Science and Applications

Abstract:Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs) and graphene compose a new family of crystalline materials with atomic thicknesses and exotic mechanical, electronic, and optical properties. Due to their inherent exceptional mechanical flexibility and strength, these 2D materials provide an ideal platform for strain engineering, enabling versatile modulation and significant enhancement of their optical properties. For instance, recent theoretical and experimental investigations have demonstrated flexible control over their electronic states via application of external strains, such as uniaxial strain and biaxial strain. Meanwhile, many nondestructive optical measurement methods, typically including absorption, reflectance, photoluminescence, and Raman spectroscopies, can be readily exploited to quantitatively determine strain-engineered optical properties. This review begins with an introduction to the macroscopic theory of crystal elasticity and microscopic effective low-energy Hamiltonians coupled with strain fields, and then summarizes recent advances in strain-induced optical responses of 2D TMDCs and graphene, followed by the strain engineering techniques. It concludes with exciting applications associated with strained 2D materials, discussions on existing open questions, and an outlook on this intriguing emerging field.
Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Rishi Maiti,Md Abid Shahriar Rahman Saadi,Rubab Amin,Ongun Ozcelik,Berkin Uluutku,Chandraman Patil,Can Suer,Santiago Solares,Volker J. Sorger

DOI: https://doi.org/10.48550/arXiv.2012.07715

2020-12-14

Mesoscale and Nanoscale Physics

Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.
Strain effects on optical properties of linearly polarized resonant modes in the presence of monolayer graphene

A. Alidoust Ghatar,D. Jahani

DOI: https://doi.org/10.48550/arXiv.2105.03633

2021-05-08

Abstract:Recently, huge attention has been drawn to improve optical sensing devices based on photonic resonators in the presence of graphene. In this paper, based on the transfer matrix approach and TE polarization for the incident electromagnetic waves, we numerically evaluate the transmission and reflection spectra for one-dimensional photonic resonators and surface plasmon resonances with strained graphene, respectively. We proved that a relatively small strain field in graphene can modulate linearly polarized resonant modes within the photonic bandgap of the defective crystal. Moreover, we study the strain effects on the surface plasmon resonances created by the evanescent wave technique at the interference between a monolayer graphene and prism.

Mesoscale and Nanoscale Physics,Optics
Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals

E. Blundo,E. Cappelluti,M. Felici,G. Pettinari,A. Polimeni

DOI: https://doi.org/10.1063/5.0037852

IF: 15

2021-06-01

Applied Physics Reviews

Abstract:The variegated family of two-dimensional (2D) crystals has developed rapidly since the isolation of its forerunner: Graphene. Their plane-confined nature is typically associated with exceptional and peculiar electronic, optical, magnetic, and mechanical properties, heightening the interest of fundamental science and showing promise for applications. Methods for tuning their properties on demand have been pursued, among which the application of mechanical stresses, allowed by the incredible mechanical robustness and flexibility of these atomically thin materials. Great experimental and theoretical efforts have been focused on the development of straining protocols and on the evaluation of their impact on the peculiar properties of 2D crystals, revealing a novel, alluring physics. The relevance held by strain for 2D materials is introduced in Sec. I. Sections II and III present the multiplicity of methods developed to induce strain, highlighting the peculiarities, effectiveness, and drawbacks of each technique. Strain has largely widened the 2D material phase space in a quasi-seamless manner, leading to new and rich scenarios, which are discussed in Secs. IV–VI of this work. The effects of strain on the electronic, optical, vibrational, and mechanical properties of 2D crystals are discussed, as well as the possibility to exploit strain gradients for single-photon emission, non-linear optics, or valley/spintronics. Quantitative surveys of the relevant parameters governing these phenomena are provided. This review seeks to provide a comprehensive state-of-the-art overview of the straining methods and strain-induced effects, and to shed light on possible future paths. The aims and developments, the tools and strategies, and the achievements and challenges of this research field are widely presented and discussed.

physics, applied
Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Jianbin Kang,Qian Li,Wangping Wang,Feiliang Chen,Mo Li,Lai Wang,Yi Luo,Jian Zhang

DOI: https://doi.org/10.1007/s11082-018-1572-3

IF: 3

2018-01-01

Optical and Quantum Electronics

Abstract:III-nitride intersubband transition has attracted much attention due to their great potential to fabricate ultrafast optoelectronic devices with broad spectrum. However, under most conditions, the transition properties are adversely affected by the polarization effect and strain effect existing in nitride materials. In this work, the optical properties of intersubband transition in a GaN/Al0.28Ga0.72N single quantum well on arbitrary crystal planes are theoretically compared for the structure strained on GaN or AlN. Under the conditions of two strain states, the difference of transition energy is gradually diminishing with the weakening of polarization intensity, while for the magnitude of intersubband dipole moment, inverse relationships are obviously observed between two groups of crystal planes when θ < 45° and 45° < θ < 90° tilted from c-plane. These findings indicate that an appropriate template layer should be chosen when designing an orientation-related intersubband device with high efficiency.
Strain and pseudo-magnetic fields in optical lattices from density-assisted tunneling

Maxime Jamotte,Nathan Goldman,Marco Di Liberto

DOI: https://doi.org/10.1038/s42005-022-00802-9

2022-01-27

Communications Physics

Abstract:Abstract Applying time-periodic modulations is routinely used to control and design synthetic matter in quantum-engineered settings. In lattice systems, this approach is explored to engineer band structures with non-trivial topological properties, but also to generate exotic interaction processes. A prime example is density-assisted tunneling, by which the hopping amplitude of a particle between neighboring sites explicitly depends on their respective occupations. Here, we show how density-assisted tunneling can be tailored in view of simulating the effects of strain in synthetic graphene-type systems. Specifically, we consider a mixture of two atomic species on a honeycomb optical lattice: one species forms a Bose-Einstein condensate in an anisotropic harmonic trap, whose inhomogeneous density profile induces an effective uniaxial strain for the second species through density-assisted tunneling processes. In direct analogy with strained graphene, the second species experiences a pseudo-magnetic field, hence exhibiting relativistic Landau levels and the valley Hall effect. Our proposed scheme introduces a unique platform for the investigation of strain-induced gauge fields, opening the door to future studies of their possible interplay with quantum fluctuations and collective excitations.

physics, multidisciplinary
Direct Fabrication Of Silicon Photonic Devices On A Flexible Platform And Its Application For Strain Sensing

Li Fan,Leo T. Varghese,Yi Xuan,Jian Wang,Ben Niu,Minghao Qi

DOI: https://doi.org/10.1364/OE.20.020564

IF: 3.8

2012-01-01

Optics Express

Abstract:We demonstrate a process to fabricate silicon photonic devices directly on a plastic film which is both flexible and transparent. This process allows the integration of complex structures on plastic films without the need of transferring from another substrate. Waveguides, grating couplers, and microring resonators are fabricated and optically characterized. An optical strain sensor is shown as an application using 5 mu m-radius microring resonators on the flexible substrate. When strain is applied, resonance wavelength shifts of the microring resonators are observed. Contributions of different effects are analyzed and evaluated. Finally, we measure the influence of residual strain and confirm the material undergoes elastic deformation within the applied strain range. (C) 2012 Optical Society of America
Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices

Maximilian G. Bartmann,Sebastian Glassner,Masiar Sistani,Riccardo Rurali,Maurizia Palummo,Xavier Cartoixà,Jürgen Smoliner,Alois Lugstein

DOI: https://doi.org/10.1021/acsami.4c05477

IF: 9.5

2024-06-21

ACS Applied Materials & Interfaces

Abstract:In this work, we explore the effect of ultrahigh tensile strain on electrical transport properties of silicon. By integrating vapor-liquid-solid-grown nanowires into a micromechanical straining device, we demonstrate uniaxial tensile strain levels up to 9.5%. Thereby the triply degenerated phonon dispersion relation at the Γ-point of silicon disentangle and the longitudinal phonon modes are used to precisely determine the extent of mechanical strain. Simultaneous electrical transport...

materials science, multidisciplinary,nanoscience & nanotechnology
A Fully Verified Theoretical Analysis Of Strain-Photonic Coupling For Quantum Wells Embedded In Wavy Nanoribbons

Jiushuang Zhang,Yun Xu,Yu Jiang,Lin Bai,Huamin Chen,Jian Li,Lei Wang,Weitong Wu,Guofeng Song

DOI: https://doi.org/10.1039/c8nr01937a

IF: 6.7

2018-01-01

Nanoscale

Abstract:For optoelectronic devices, an attractive research field involves the flexible adjustment of the band gap in semiconductor quantum well (QW) structures by strain engineering. However, rigid wafer-based technology enables lattice-misfit strain during epitaxial growth, which is biaxial, unchangeable, and not sufficient for the devices fitted on various irregular surfaces. Therefore, exploiting the strain produced by externally deformed configurations offers unique opportunities to continuously and non-defectively tune the QW's band structure. Here, we propose a strategy to induce uniaxially distributed strain in elaborately designed wavy quantum well nanoribbons (QWNRs). Meanwhile, a numerically solved strain-photonic coupling model based on the theory of elasticity and the eight-band k.p method is established to illustrate the strain distribution coupled with the strain-induced band gap shift of the wavy QWNR. The mu-photoluminescence measurements reveal a periodically varied band gap in the QW along the uniaxial tensile direction, which is consistent with the result of theoretical calculations. This model demonstrates the potential application of a wrinkled configuration in arbitrarily controlling and tuning the band gap and thus the optoelectronic performances of quantum well systems.
Strain engineering photonic properties in monolayer semiconductors through mechanically-reconfigurable wrinkling

Yue Zhang,M. Hossain,A. M. van der Zande

DOI: https://doi.org/10.1117/12.2567539

2020-08-20

Abstract:Inhomogeneous and three-dimensional strain engineering in two dimensional materials opens up new avenues to straintronic devices for control strain sensitive photonic properties. Here we present a method to tune strain by wrinkling monolayer WSe2 attached to a 15 nm thick ALD support layer and compressing the heterostructure on a soft substrate. The ALD film stiffens the 2D material, enabling optically resolvable micron scale wrinkling rather than nanometer scale crumpling and folding. Using photoluminescence spectroscopy, we show the wrinkling introduces periodic modulation of the bandgap by 47 meV, corresponding with strain modulation from +0.67% tensile strain at the wrinkle crest to -0.31% compressive strain at the trough. Moreover, we show that cycling the substrate strain mechanically reconfigures the magnitude and direction of wrinkling and resulting band tuning. These results pave the way towards stretchable multifuctional devices based on strained 2D materials.

Materials Science,Physics,Engineering
Strain-driven light polarization switching in deep ultraviolet nitride emitters

T. K. Sharma,Doron Naveh,E. Towe

DOI: https://doi.org/10.1103/PhysRevB.84.035305

2011-01-09

Abstract:Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial layers and in modifying their band structure; this often leads to several interesting physical phenomena. It is found, for example, that compressive strain in AlxGa1-xN layers grown on AlyGa1-yN (x<y) templates results in an anti-crossing of the valence bands at considerably much higher Al composition than expected. This happens even in the presence of large and negative crystal field splitting energy for AlxGa1-xN layers. A judicious magnitude of the compressive strain can support vertical light emission (out of the c-plane) from AlxGa1-xN quantum wells up to x\approx 0.80, which is desirable for the development of deep ultraviolet light-emitting diodes designed to operate below 250nm with transverse electric polarization characteristics.

Materials Science

Strain-induced Landau levels in photonic crystals

Direct observation of Landau levels in silicon photonic crystals

Electrical Manipulation of Lightwaves in the Uniaxially Strained Photonic Honeycomb Lattices under a Pseudomagnetic Field

Landau levels in strained two-dimensional photonic crystals

Observation of Landau levels and topological edge states in photonic crystals through pseudomagnetic fields induced by synthetic strain

Observation of Landau levels and chiral edge states in photonic crystals through pseudomagnetic fields induced by synthetic strain

Realizing One-Dimensional Electronic States in Graphene Via Coupled Zeroth Pseudo-Landau Levels.

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Strain engineering of the electronic states of silicon-based quantum emitters

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Strain effects on optical properties of linearly polarized resonant modes in the presence of monolayer graphene

Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals

Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Strain and pseudo-magnetic fields in optical lattices from density-assisted tunneling

Direct Fabrication Of Silicon Photonic Devices On A Flexible Platform And Its Application For Strain Sensing

Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices

A Fully Verified Theoretical Analysis Of Strain-Photonic Coupling For Quantum Wells Embedded In Wavy Nanoribbons

Strain engineering photonic properties in monolayer semiconductors through mechanically-reconfigurable wrinkling

Strain-driven light polarization switching in deep ultraviolet nitride emitters