Abstract:Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the propagation of atomic steps, a process called step-flow growth. In some instances, the steps tend to form close groups (or bunches), a phenomenon termed step bunching, which corresponds to an instability of the equal-spacing step propagation. Over the last fifty years, various mechanisms have been proposed to explain step bunching, the most prominent of which are the inverse Ehrlich-Schwoebel effect (i.e., the asymmetry which favors the attachment of adatoms from the upper terrace), elastically mediated interactions between steps (in heteroepitaxy), step permeability (in electromigration-controlled growth), and the chemical effect (which couples the diffusion fields on all terraces). Beyond the discussion of the influence of each of these mechanisms taken independently on the propensity to bunching, we propose a unified treatment of the effect of these mechanisms on the onset of the bunching instability, which also accounts for their interplay. This is done in the setting of the so-called quasistatic approximation, which by permitting mostly analytical treatment, offers a clear view of the influence on stability of the combined mechanisms. In particular, we find that the Ehrlich-Schwoebel effect, elastic step-interactions and the chemical effect combine in a quasi-additive fashion, whereas step permeability is neither stabilizing nor destabilizing per se but changes the relative influence of the three aforementioned mechanisms. In a companion paper, we demonstrate and discuss the importance of another mechanism, which we call the dynamics effect, that emerges when relaxing the simplifying but questionable quasistatic approximation.

Evolutionary approach for finding the atomic structure of steps on stable crystal surfaces

Reconstruction of silicon surfaces: a stochastic optimization problem

Step Bunching Formation On Gaas(001) Introduced By Surface Reconstruction

Systematic Comparison of Genetic Algorithm and Basin Hopping Approaches to the Global Optimization of Si(111) Surface Reconstructions

Roughening and preroughening transitions in crystal surfaces with double-height steps

Burton-Cabrera-Frank theory for surfaces with alternating step types

Atomic Steps on the Mgo(100) Surface

Local Quantum Dot Tuning on Photonic Crystal Chips

New Directions for Atomic Steps: Step Alignment by Grazing Incident Ion Beams on Tio2(110)

Arrays of widely spaced atomic steps on Si(111) mesas due to sublimation

Revisiting step instabilities on crystal surfaces. Part I: The quasistatic approximation

The radial velocities and physical parameters of HD 553

Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

Long‐range Atomic Order on Double‐Stepped Al2O3(0001) Surfaces

Interplay Between Elastic Interactions and Kinetic Processes in Stepped Si (001) Homoepitaxy

Powder X-Ray Diffraction Assisted Evolutionary Algorithm for Crystal Structure Prediction

Stepped Morphology on Vicinal 3C- and 4H-Sic (0001) Faces: A Kinetic Monte Carlo Study

How Atoms Move in the (1 × 1) to (1 × 2) Surface Reconstruction of Fcc (110) Planes

Deciphering the Atomistic Mechanism of Si(111)-7 × 7 Surface Reconstruction Using a Machine-Learning Force Field

A continuum description of the energetics and evolution of stepped surfaces in strained nanostructures

Steps and terraces at quasicrystal surfaces. Application of the 6d-polyhedral model to the analysis of STM images of i-AlPdMn