Abstract:Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in successful productions of ATLAS and Medipix-based silicon pixel sensors by a few foundries. However, the drawbacks of edgeless sensors are poor radiation hardness for ionizing radiation and non-uniform charge collection by edge pixels. In this work, the radiation hardness of edgeless sensors with different polarities has been investigated using Synopsys TCAD with X-ray radiation-damage parameters implemented. Results show that if no conventional guard ring is present, none of the current designs are able to achieve a high breakdown voltage (typically < 30 V) after irradiation to a dose of ~10 MGy. In addition, a charge-collection model has been developed and was used to calculate the charges collected by the edge pixels of edgeless sensors when illuminated with X-rays. The model takes into account the electric field distribution inside the pixel sensor, the absorption of X-rays, drift and diffusion of electrons and holes, charge sharing effect, and threshold settings in ASICs. It is found that the non-uniform charge collection of edge pixels is caused by the strong bending of electric field and the non-uniformity depends on bias voltage, sensor thickness and distance from active edge to the last pixel ("edge space"). In particular, the last few pixels close to the active edge of the sensor are not sensitive to low-energy X-rays (< 10 keV) especially for sensors with thicker Si and smaller edge space. The results from the model calculation have been compared to measurements and good agreement was obtained. The model has been used to optimize the edge design.

Edgeless Silicon Detectors for the TOTEM Experiment

Transition edge sensor based detector: from X-ray to $γ$-ray

Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors

Performance of active edge pixel sensors

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

The Tangerine project: Development of high-resolution 65 nm silicon MAPS

Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

Digital Pixel Test Structures implemented in a 65 nm CMOS process

200 mm sensor development using bonded wafers

Design and Performance of HV CMOS Sensors for Future Colliders by the RD50 Collaboration

RF Measurements of the New TOTEM Roman Pot

Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

Beyond the CMOS sensors: the DoTPiX pixel concept and technology for the International Linear Collider A

Laboratory studies of THGEM-based WELL structures with resistive anodes

Characterization of passive CMOS sensors with RD53A pixel modules

Silicon detector R$\&$D for the future Electron-Ion Collider

3D silicon pixel detectors for the ATLAS Forward Physics experiment

Detection of low-energy electrons with transition-edge sensors

Fabrication Of Ultra-Thin Silicon Pin Detector

The TOTEM nT2 detector: architecture, operation and performance