Comprehensive theoretical investigation of NaAlX (X[math][math][math]C, Si and Ge) half-Heusler compounds: Unveiling the multifaceted properties for advanced applications
Ghanshyam Lal Menaria,Upasana Rani,Peeyush Kumar Kamlesh,Monika Rani,Nihal Singh,Dinesh C. Sharma,Ajay Singh Verma
DOI: https://doi.org/10.1142/s0217979225500523
2024-05-16
International Journal of Modern Physics B
Abstract:International Journal of Modern Physics B, Ahead of Print. In this work, we have extensively investigated the characteristics of ternary half-Heusler (HH) materials, specifically NaAlX (X[math][math][math]C, Si and Ge), employing ab-initio computations in density functional theory (DFT) framework. Various aspects, including stability parameters, electronic, optical and thermoelectric (TE) parameters have been examined. The computed lattice constants of NaAlX (X[math][math][math]C, Si and Ge) were found to be, respectively, 5.398, 6.301 and 6.389[math]Å which are in excellent agreement with the previously available data. The electronic band structures showed that the studied materials exhibit semiconducting behavior with a corresponding band gap of 1.961, 0.999 and 0.846[math]eV, respectively. Specifically, NaAlC and NaAlGe compounds were found to have a direct energy band gap at the [math]-point, while NaAlSi displayed an indirect band gap at the [math]–X point. Elastic and thermodynamic parameters were examined, confirming that the titled compounds possess mechanical, dynamic and thermal stability. Additionally, the optical response of the materials has been analyzed within an energy range of 0–13[math]eV. The TE parameters exhibited maximum ZT values of 0.998, 0.992 and 0.990 for NaAlX (X[math][math][math]C, Si and Ge) materials, respectively, at 300[math]K, suggesting promising TE performance at room temperature.
physics, condensed matter, applied, mathematical