Abstract:Oxide growth with semiconductor-like accuracy allows the fabrication of atomically precise thin films and interfaces displaying a wide range of phases and functionalities that are absent in the corresponding oxide bulk materials. Among the other properties it was found that a two-dimensional electronic gas is formed under some circumstances at the LaAlO3/SrTiO3(0 0 1) interface separating two typical insulating perovskite crystals. The origin of this conducting state has been discussed at length, since different doping mechanisms can act in these material systems. Many experimental results point to the so-called polar catastrophe scenario as the principal mechanism driving the formation of the two-dimensional electronic gas. According to this mechanism, the existence of an interfacial polar discontinuity is the key ingredient to drive an electronic reconstruction at the LaAlO3/SrTiO3(0 0 1) interface and the consequent formation of a two-dimensional electron gas. This simple picture has been often questioned by the existence of material systems whose interface are predicted being non-polar according to the simplistic 'ionic' limit but that display an electrical behavior analogous to that of LaAlO3/SrTiO3(0 0 1) interfaces. This is the case of the LaAlO3/SrTiO3(1 1 0), i.e., a LaAlO3/SrTiO3 interface with a different in-plane orientation. It is evident that to solve such kind of controversies a detailed investigation of the polar or non-polar state of these interfaces is needed, although this is not simple for the lack of experimental tools that are specifically sensitive to interfacial polarity. Here we apply Optical Second Harmonic Generation to investigate LaAlO3/SrTiO3 interfaces with different in-plane orientations to bridge this gap. By comparing our results with recent theoretical findings, we will arrive to the conclusion that the real LaAlO3/SrTiO3(1 1 0) interface is strongly polar.

The interface between a polar perovskite oxide and silicon from monoatomic lines

Optical second harmonic generation from LaAlO3/SrTiO3 interfaces with different in-plane anisotropies

Coexistence of surface oxygen vacancy and interface conducting states in LaAlO3/SrTiO3 revealed by low-angle resonant soft X-ray scattering

Surface defects and conduction in polar oxide heterostructures

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

The interface between silicon and a high-k oxide

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Electronically coupled complementary interfaces between perovskite band insulators

Intrinsic Versus Extrinsic Orbital and Electronic Reconstructions at Complex Oxide Interfaces

Control of lectronic onduction at an xide eterointerface using olar dsorbates

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Strong electronic correlation and strain effects at the interfaces between polar and nonpolar complex oxides

Understanding the Clean Interface Between Covalent Si and Ionic Al2O3

Understanding the Clean Interface Between Covalent Si and IonicAl2O3

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

The interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies in insulator-metal transition of LaAlO$_{3}$/SrTiO$_{3}$

Control of electronic conduction at an oxide heterointerface using surface polar adsorbates

Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Direct observation of two-dimensional small polarons at correlated oxide interface