Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon

C.J. Först,C.R. Ashman,K. Schwarz,P.E. Blöchl

DOI: https://doi.org/10.1016/j.mee.2005.04.100

IF: 2.3

2005-06-01

Microelectronic Engineering

Abstract:The replacement of SiO2 by so-called high-k oxides is one of the major challenges for the semiconductor industry to date. Based on electronic structure calculations and ab-initio molecular dynamics simulations, we are able to provide a consistent picture of the growth process of a class of epitaxial oxides around SrO and SrTiO3. The detailed understanding of the interfacial binding principles has also allowed us to propose a way to engineer the band-offsets between the oxide and the silicon substrate.

engineering, electrical & electronic,nanoscience & nanotechnology,optics,physics, applied