Weak localization in arrays of metallic quantum dots

Dmitri S. Golubev,Andrei D. Zaikin

DOI: https://doi.org/10.48550/arXiv.cond-mat/0607551

2006-07-21

Abstract:Combining scattering matrix formalism with non-linear $\sigma$-model technique we analyze weak localization effects in arrays of chaotic quantum dots connected via barriers with arbitrary distribution of channel transmissions. With the aid of our approach we evaluate magnetoconductance of two arbitrarily connected quantum dots as well as of $N\times M$ arrays of identical quantum dots.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the theoretical description and calculation of the weak localization (WL) effect in quantum dot arrays. Specifically, the author aims to analyze the weak localization effect in metal quantum dot arrays connected by potential barriers with arbitrary distribution channel transmission by combining the scattering matrix formalism and the nonlinear σ - model technique. The following is a detailed analysis of this problem:

### 1. **Research Background**
- **Importance of Quantum Interference**: The transport behavior of electrons in disordered conductors is affected by quantum coherence effects, which are particularly significant at low temperatures. However, electron - electron interactions still exist at extremely low temperatures and may disrupt the quantum interference of electrons.
- **Saturation Phenomenon of Weak Localization**: It has been observed in experiments that the correction of weak localization to conductivity (\(\delta G_{WL}(T)\)) tends to saturate at low temperatures. This phenomenon not only occurs in metal wires but also exists widely in various types of disordered conductors.

### 2. **Limitations of Existing Theories**
- **Chakravarty - Schmid Description**: Existing theoretical frameworks such as the Chakravarty - Schmid description can explain certain phenomena, but have difficulties in dealing with systems such as quantum dots and granular metals.
- **Path Integral Influence Function Technique**: Although the Feynman - Vernon path integral influence function technique is powerful, it is difficult to be directly applied to all types of disordered conductors.

### 3. **Goals of the Paper**
- **Establish a Unified Theoretical Framework**: The author hopes to develop a unified theoretical framework that can cover almost all types of disordered conductors, ranging from granular metals to conductors with point - like impurities.
- **Handle Conductors of Different Scales**: This framework should be able to handle spatially - confined and spatially - extended conductors and give definite results in the long - wavelength and short - wavelength limits.

### 4. **Specific Problems**
- **Quantum Dot Array Model**: To achieve the above goals, the author selects an array model composed of metal quantum dots connected by potential barriers. Each quantum dot is described by the scattering matrix formalism, and the disorder average is achieved in the Keldysh formula by the nonlinear σ - model technique.
- **Weak Localization Correction**: The author pays special attention to how to calculate the correction of weak localization to conductivity (\(\delta G_{WL}\)) and introduces an effective electron dephasing time \(\tau_\phi\) to characterize the influence of electron - electron interactions.

### 5. **Expected Results**
- **Quantitatively Explain Experimental Phenomena**: Through this theoretical framework, the author hopes to quantitatively explain the saturation phenomenon of the weak localization correction observed in experiments and provide new insights into understanding the role of electron - electron interactions at low temperatures.
- **Generalize to Other Systems**: Eventually, this theoretical framework will be generalized to two - dimensional and three - dimensional quantum dot arrays and other types of disordered conductors to verify its universality and applicability.

In summary, the main purpose of this paper is to gain an in - depth understanding and quantitatively describe the weak localization effect in quantum dot arrays through the development of a new theoretical framework, especially the influence of electron - electron interactions at low temperatures.